Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T18:48:00.693Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric

Published online by Cambridge University Press:  17 March 2011

R. A. Donaton ,
B. Coenegrachts ,
E. Sleeckx ,
M. Schaekers ,
G. Sophie ,
N. Matsuki ,
M. R. Baklanov ,
H. Struyf ,
M. Lepage  and
S. Vanhaelemeersch
...Show all authors
R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
B. Coenegrachts
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
E. Sleeckx
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Schaekers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Sophie
Affiliation:
ASM Japan, 6-23-1, Nagayama, Tama, Tokyo, Japan
N. Matsuki
Affiliation:
ASM Japan, 6-23-1, Nagayama, Tama, Tokyo, Japan
M. R. Baklanov
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Struyf
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Lepage
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Vanhaelemeersch
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Beyer
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Stucchi
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
D. De Roest
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC and E.E. Department, K. U. Leuven, Belgium
Get access

Abstract

AURORA films, which have a Si-O-Si network with –CH3 terminations, were characterized and integrated into Cu single damascene structures. The relatively low carbon concentration (∼ 20%) and the very small pore size (∼ 0.6 nm) found could be advantageous during integration of AURORA. Integration of AURORA into Cu single damascene structures was successfully achieved. Suitable resist strip processes, which are critical for Si-O-C type materials, were developed, resulting in trenches with satisfactory profiles. After a complete single damascene process, a interline dielectric constant value of 2.7 was found for line spacing down to 0.25 µm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.14.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Russel, S.W., McKerrow, A.J., Shih, W.-Y., Singh, A., List, R.S., Ralston, A.R.K., Lee, W.W., Newton, K.J., Chang, M.-C., and Havemann, R.H., Proc. ULSI XIII, 1998, pp.289–300.Google Scholar
[2] MRS Bulletin 22, Oct 1997.Google Scholar
[3] Peters, L., Semiconductor International 22, 1999, pp.56–64.Google Scholar
[4] Matsuki, N., Matsunoshita, A., Lee, J.S., Morisada, Y., Naito, Y., and Merritt, C., 2000 Proceedings Sixth International Dielectrics for ULSI Multilevel Interconnection Conference (DUMIC), pp. 151 to 160.Google Scholar
[5] Loboda, M. J., Seifferly, J.A., Schneider, R.F., and Grove, C.M., Proceedings of the Symposia on Electrochemical Processing in ULSI Fabrication I and Interconnect and Contact Metallization: Materials, Processes, and Reliability. Electrochem. Soc, Pennington, NJ, USA; 1999; viii+274 pp. 145–52.Google Scholar
[6] Baklanov, M.R., Mogilnikov, K.P., Polovinkin, V.G., and Dultsev, F.N., J. Vac. Sci. Technol. B 18(3), May/June 2000.Google Scholar
[7] Baklanov, M.R. and Mogilnikov, K.P, to be published in Mat. Res. Soc. Symp. Proc., Symposium D: “Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics”, 2000 MRS Spring Meeting.Google Scholar