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Channeling defects in group-III nitrides during dry etching processes

Published online by Cambridge University Press:  15 March 2011

O. Breitschädel ,
J.T. Hsieh ,
B. Kuhn ,
F. Scholz  and
H. Schweizer
O. Breitschädel
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, GermanyPhone: +49-711-685-4961, Fax: +49-711-685-5097, [email protected]
J.T. Hsieh
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
B. Kuhn
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
F. Scholz
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
H. Schweizer
Affiliation:
4. Phys. Institute, University of Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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Abstract

The effects of Ar+ ion beam etching (IBE) of AlGaN/GaN heterostructures and GaN/InGaN/GaN quantum well structures were investigated dependent on different ion incidence angles. The AlGaN/GaN heterostructure was measured before and after etching with respect to mobility and sheet resistance. The InGaN quantum well structure was measured with PL to determine the PL intensity and the energy shift, respectively. This experiments show that ion channeling is a significant defect generation phenomena in group- III nitrides at vertical ion incidence angle and can be minimized by tilting the sample against the ion beam.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.33.1
Copyright
Copyright © Materials Research Society 2000

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References

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