Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T04:26:34.038Z Has data issue: false hasContentIssue false

Bi2Te3: Structural Modulations in Epitaxially Grown Superlattices and Bulk Materials

Published online by Cambridge University Press:  01 February 2011

Nicola Peranio
Affiliation:
[email protected], Institut fuer Angewandte Physik, Universitaet Tuebingen, Auf der Morgenstelle 10, Tuebingen, N/A, D-72076, Germany
Oliver Eibl
Affiliation:
[email protected], Universitaet Tuebingen, Institut fuer Angewandte Physik, Germany
Joachim Nurnus
Affiliation:
[email protected], Fraunhofer Institut, Physikalische Messtechnik, Germany
Get access

Abstract

Multiquantum well structures of Bi2Te3 are predicted to show an enhancement of the thermoelectric figure of merit ZT. Electron-conducting Bi2Te3 thin films and superlattices (SL) with a period of 12 nm were epitaxially grown on BaF2 substrates by molecular beam epitaxy. The microstructure was investigated by transmission electron microscopy. The SL could be imaged with strong contrast yielding a period of 12.0±0.5 nm. The SL is slightly bent with an amplitude of 30 nm and a wave length of 400 nm. Threading dislocations were found with a density of 2·109 cm−2. The SL interfaces are strongly bent close to threading dislocations, undisturbed regions have a maximum lateral size of 500 nm. A structural modulation (nns) with a wave length of 10 nm was found in Bi2Te3 thin films, superlattices and bulk materials. The structural modulation is found to be of general character for Bi2Te3 materials and is superimposed to the average structure. It was analysed in detail by stereomicroscopy in bulk material yielding a pure structural modulation with a displacement vector parallel to [5,-5,1] and a wave vector parallel to (1,0,10). The investigations showed the presence of none, one or two (nns). The number of (nns) and thereby the thermoelectric properties might be controlled by the growth parameters. Phonons should be scattered on the sinusoidal strain field of the (nns) yielding (i) a significantly decreased thermal conductivity, (ii) a reduced dimensionality and (iii) anisotropic transport coefficients in the basal plane.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hicks, L. D. and Dresselhaus, M.S., Phys. Rev. B47 (19), 1272712731 (1993)Google Scholar
2. Venkatasubramanian, R., Phys. Rev. B61 (4), 30913097 (2000)Google Scholar
3. Venkatasubramanian, R., Siivola, E., Colpitts, T., O'Quinn, B., Nature 413, 597602 (2001)Google Scholar
4. Beyer, H., Nurnus, J., Böttner, H., Lambrecht, A., Wagner, E., Bauer, G., Physica E13, 965968 (2002)Google Scholar
5. Nurnus, J., Künzel, C., Beyer, H., Lambrecht, A., Böttner, H., Meier, A., Blumers, M., Völklein, F., Herres, N., Proc. 19th Int. Conf. on Thermoelectrics, Cardiff, U.K., 236240 (2000)Google Scholar
6. Nurnus, J., Böttner, H., Beyer, H., Lambrecht, A., Proc. 18th Int. Conf. on Thermoelectrics, Baltimore, MD, USA, 696699 (1999)Google Scholar
7. Scherrer, H. and Scherrer, S., “Bismuth Telluride, Antimony Telluride and their solid solutions”, CRC Handbook of Thermoelectrics, edited by Rowe, D.M. (CRC Press, ISBN-0849301467, 1995), p. 215 Google Scholar
8. Eyidi, D., Maier, D., Eibl, O., Westphal, M., Phys. Stat. Sol. (a), 187 (2), 585600 (2001)Google Scholar
9. Maier, D., Eyidi, D., Eibl, O., Proc. 6th workshop of the European Thermoelectric Society, Freiburg, Germany (2001)Google Scholar
10. Peranio, N., Eibl, O., in preparationGoogle Scholar
11. Peltron GmbH, 90765 Fürth, GermanyGoogle Scholar
12. Francombe, M.H., Brit. J. Appl. Phys., Vol. 9 (1958), pp. 415417 Google Scholar
13. Peranio, N., Eibl, O., Nurnus, J., Proc 23th Int. Conf. on Thermoelectrics, Adelaide, Australia (2004), to be publishedGoogle Scholar
14. Cahill, D.G., Ford, W.K., Mahan, K.D., Majumdar, A., Maris, H.J., Merlin, R., Philpot, S.R., J. Appl. Phys. 93 (2), 793818 (2003)Google Scholar
15. Walker, P.A., Proc. Phys. Soc. 76, 113126 (1960)Google Scholar
16. Stecker, K., Süssmann, H., Eichler, W., Heiliger, W., Stordeur, M., Wiss. Z. Univ. Halle 27 (H5), 563 (1978)Google Scholar
17. Hsu, Kuei-Fang, Loo, Sim, Guo, Fu, Chen, Wie, Dick, J.S., Uher, C., Hogan, T., Polychroniadis, E.K., Kanatzidis, M.G., Science 303, 818821 (2004)Google Scholar