Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-02-04T18:02:21.509Z Has data issue: false hasContentIssue false
  • English
  • Français

Annealing Study of Erbium and Oxygen Implanted Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

John T. Torvik ,
Robert J. Feuerstein ,
Chang H. Qiu ,
Moeljanto W Leksono ,
Jacques I. Pankove  and
Fereydoon Namavar
John T. Torvik
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309-0425.
Robert J. Feuerstein
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309-0425.
Chang H. Qiu
Affiliation:
Astralux, Inc., Boulder, CO 80303.
Moeljanto W Leksono
Affiliation:
Astralux, Inc., Boulder, CO 80303.
Jacques I. Pankove
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309-0425. Astralux, Inc., Boulder, CO 80303.
Fereydoon Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730-2396.
Get access

Abstract

A systematic study of photoluminescence (PL) of Er and O ion implanted and annealed n-type GaN grown on R-plane sapphire (A12O3) was performed. The Er implants ranged from 2 × 1013 to 1 × 1015 Er++/cm2, and the O co-implants ranged from 1014 to 1016 O+/cm2. The resulting nine different combinations of GaN:Er,O were annealed at 600 °C (4 hrs. in N2), 700 °C (1.5 hrs. in N2), 800 °C (0.75 hr. in NH3), and 900 °C (0.5 hr. in NH3) Following each annealing step, the Er3 -related PL at 1.54 μm was measured from each sample at 77K, when pumped directly with 135 mW of power at 980 nm. The three samples with the highest dose of Er (1 × 1015 Er++/ cm 2), regardless of O co-dopant dose, yielded the strongest PL peak intensity at 1.54 μm after all the anneals. The integrated PL from 1.52 to 1.58 μm was reduced by 62 % when going from 77 K to room temperature (RT).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 199
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Ennen, H., Schneider, J., Pomrenke, G., and Axmann, A., Appl. Phvs Lett. 43, 943 (1983),Google Scholar
Nakagome, H., Uwai, K., and Takahei, K., Appl. Phys. Lett 53, 1726 (1988)Google Scholar
3. Miya, T., Terunuma, Y., Hosaka, T., and Miyashita, T, El. Lett 15. 106 (1979).Google Scholar
4. Chang, C. T., El. Lett., 15, 765 (1979), Appl. Opt., 18, 2516 (1979)Google Scholar
5. Digonnet, M. J. F., Rare Earth DopedP Fiber Lasers andAmplifiers, Dekker, New York, 1993.Google Scholar
6. Kimura, T., Isshiki, H., Ishida, H., Yugo, S., Saito, R., Ikoma, T., J Appl. Phys. 76, 3714 (1994).Google Scholar
7. Lomardo, S., Campisano, S. U., van den Hoven, G. N., and Polman, A, J. Appl. Phys. 77, 6504 (1995).Google Scholar
8. Miniscalco, W. J., IEEE/OSAJ. Lightwave Technol., LT–9, 234–250 (1991).Google Scholar
9. Wang, X. Z. and Wessels, B. W., Appl. Phys. Lett., 65, 584 (1994)Google Scholar
10. Zheng, B., Michel, J., Ren, F. Y. G., Kimerling, L. C., Jacobson, D. C, and Poate, J. M., Appl. Phys. Lett. 64, 2842 (1994).Google Scholar
11. Franzo, G., Priolo, F., Coffa, S., Polman, A., Camera, A., Appl Phys Lett. 64, 2235 (1994).Google Scholar
12. Eaglesham, D. J., Michel, J., Fixgerald, E. A., Jacobson, D. C., Poate, J. M, Benton, J. L., Polman, A., Xie, Y.-X, and Kimerling, L. C., Appl. Phys. Lett 58, 2797.(1991).Google Scholar
13. Favennec, P. N., L'Haridon, H., Salvi, M., Moutonnet, D., and Guillou, Y. Le, El. Lett. 25, 718 (1989).Google Scholar
14. Favennec, P. N., L'Haridon, H., Moutonnet, D., Salvi, M., and Guillou, Y. Le, Jpn. J. Appl. Phys. 29, L524 (1986).Google Scholar
15. Michel, J., Benton, J. L., Ferrante, R. F., Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y.- H., Poate, J. M., and Kimerling, L. C.. J. Appl. Phys. 70, 2672 (1991).Google Scholar
16. R, Wilson, G., Schwartz, R. N., Abernathy, C. R, Pearton, S. J. Newman, N., Rubin, M., Fu, T., and Zavada, J. M., Appl. Phys. Lett. 65, 992 (1994).Google Scholar
17. Qiu, C. H., Leksono, M. W., Pankove, J. I., Torvik, J. T., Feuerstein, R. J., and Namavar, F., Appl. Phys. Lett. 66, 562 (1995).Google Scholar
18. Choyke, W. J., Devaty, R. P., Clemen, L. L., Yoganathan, M., Pensl, G, and Hassler, Ch., Appl. Phys. Lett. 65, 1668 (1994).Google Scholar