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All Epitaxial Babi4Ti4O15 - LaNiO3 Heterostructures

Published online by Cambridge University Press:  10 February 2011

K. M. Satyalakshmi
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
A. Pignolet
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
M. Alexe
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
N. D. Zakharov
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
C. Harnagea
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
S. Senz
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
S. Reichelt
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
D. Hesse
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
U. Gösele
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
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Abstract

Bismuth-based layer-structured ferroelectric oxides are gaining much attention for ferroelectric thin film applications due to their low fatigue. Epitaxial thin films of these layered ferroelectric oxides grown on epitaxial perovskite-type conducting oxide electrodes such as LaNiO3 are known to further improve the fatigue resistance. In this paper the ferroelectric properties of BaBi4Ti4O15films grown by pulsed laser deposition on epitaxial LaNiO3/SrTiO3(100) and LaNiO3/YSZ/Si(100) substrates are presented. BaBi4Ti4O15thin films with mixed a - and c - orientation exhibit ferroelectric hysteresis loops with a remanent polarization Pr of 2 μC/cm2and a coercive field Ec of about 75 kV/cm. The effect of the deposition parameters on thin film orientation, morphology and the ferroelectric properties of BBiT are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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