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1.6 μm Emission from InAs Quantum Dots grown on a GaAs Substrate using an AlGaAsSb Metamorphic Buffer

Published online by Cambridge University Press:  11 February 2011

G. Balakrishnan ,
S. Birudavolu ,
L. R. Dawson ,
D. L. Huffaker ,
Huifang Xu  and
Yingbing Jiang
G. Balakrishnan
Affiliation:
Center For High Technology Materials, University Of New Mexico, Albuquerque, NM
S. Birudavolu
Affiliation:
Center For High Technology Materials, University Of New Mexico, Albuquerque, NM
L. R. Dawson
Affiliation:
Center For High Technology Materials, University Of New Mexico, Albuquerque, NM
D. L. Huffaker
Affiliation:
Center For High Technology Materials, University Of New Mexico, Albuquerque, NM
Huifang Xu
Affiliation:
TEM Laboratory, Dept. of Earth and planetary sciences, University of New Mexico, Albuquerque, NM
Yingbing Jiang
Affiliation:
TEM Laboratory, Dept. of Earth and planetary sciences, University of New Mexico, Albuquerque, NM
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Abstract

We report 1.6 μm emission from InAs QDs (QDs) grown on a GaAs substrate. The ensemble is grown on a graded digital alloy (DA), which increases the matrix lattice constant from 5.65 Å to 5.77 Å. The reduced lattice mismatch between the InAs and matrix material produces larger QDs and thereby allows longer wavelength emission compared to standard growth techniques. The resulting QD density ranges from 2×1010 to 8×1010/cm2 with QD dimensions of 5nm x 30nm measured using atomic force microscopy (AFM). According to x-ray diffraction (XRD) data and transmission electron microscopy (TEM), the metamorphic buffer is unstrained with low defect density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E2.4
Copyright
Copyright © Materials Research Society 2003

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