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Phase change materials

Published online by Cambridge University Press:  17 February 2012

Simone Raoux ,
Daniele Ielmini ,
Matthias Wuttig  and
Ilya Karpov
Simone Raoux
Affiliation:
IBM T.J. Watson Research Center; [email protected]
Daniele Ielmini
Affiliation:
Dipartimento di Elettronica e Informazione and IUNET, Politecnico di Milano; [email protected]
Matthias Wuttig
Affiliation:
I. Physikalisches Institut (IA), RWTH Aachen University; [email protected]
Ilya Karpov
Affiliation:
Intel Corporation; [email protected]
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Abstract

Phase change materials can be switched rapidly and repeatedly between amorphous and crystalline phases, which differ distinctly in their optical and electrical properties. This combination of properties is utilized to store information in rewritable optical storage media and in emerging phase change memory technology. This article describes the physical properties of phase change materials such as Ge2Sb2Te5 and relates these properties to specific structural and bonding characteristics. Electrical conduction and switching, which are relevant for phase change memory operation, are explained from a physical perspective. Phase change memory device integration and technology development are discussed, including aspects of access device selection and integration.

Keywords

Memoryphase transformationamorphouscrystal
Type
Research Article
Information
MRS Bulletin , Volume 37 , Issue 2: Resistive switching phenomena in thin films: Materials, devices, and applications , February 2012 , pp. 118 - 123
Copyright
Copyright © Materials Research Society 2012

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