Ion-Assisted Processing of Electronic Materials

Extract

The fabrication of a state-of-the-art silicon chip consists of a carefully composed sequence of “steps.” The length, complexity, and place of each step within this process is analogous to that of a musical phrase within a long sonata. Just as a sonata consists of a series of recurring but evolving themes, a “process” utilizes a number of basic techniques that recur in a variety of contexts. A typical modern process consists of about 350 “steps.” Roughly a fifth of them belong to the class of ionassisted processing. These range from a variety of ion implantation modules, through sputter deposition and reactive ion etching of thin films, to photoresist etching and ashing. Ion-assisted processing thus has a role of major technological importance. With the range of new processes currently under active research, this trend seems likely to continue.

The technological applications of ionassisted processing rest on the basic concepts developed in research over the past 30 years. This special issue of the MRS Bulletin reviews the fundamental concepts that underpin this processing today, and highlights areas of current research which may have future technological potential. The emphasis is placed heavily on silicon, both for illustrative purposes, and because Si processing is the major customer for ion-assisted technology. The articles pinpoint areas where materials research can play a critical role in establishing the fundamental understanding needed for a realistic assessment of technological potential.