Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-12T21:31:11.712Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Graphenes on Silicon Carbide

Published online by Cambridge University Press:  31 January 2011

Phillip N. First ,
Walt A. de Heer ,
Thomas Seyller ,
Claire Berger ,
Joseph A. Stroscio  and
Jeong-Sun Moon
Get access

Abstract

This article reviews the materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals and progress toward the deterministic manufacture of graphene devices. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) differs from growth on the C-terminated SiC(0001) surface, resulting in, respectively, strong and weak coupling to the substrate and to successive graphene layers. Monolayer epitaxial graphene on either surface displays the expected electronic structure and transport characteristics of graphene, but the non-graphitic stacking of multilayer graphene on SiC(0001) determines an electronic structure much different from that of graphitic multilayers on SiC(0001). This materials system is rich in subtleties, and graphene grown on the two polar faces of SiC differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

Type
Articles
Information
MRS Bulletin , Volume 35 , Issue 4: Beyond Silicon: Carbon-Based Nanotechnology , April 2010 , pp. 296 - 305
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A.Y., Feng, R., Dai, Z., Marchenkov, A.N., Conrad, E.H., First, P.N., de Heer, W.A., J. Phys. Chem. B 108, 19912 (2004).CrossRefGoogle Scholar
2.Javey, A., Guo, J., Wang, Q., Lundstrom, M., Dai, H., Nature 424, 654 (2003).CrossRefGoogle Scholar
3.Frank, S., Poncharal, P., Wang, Z.L., de, W.A. Heer, Science 280, 1744 (1998).CrossRefGoogle Scholar
4.Mintmire, J.W., White, C.T., Phys. Rev. Lett. 81, 2506 (1998).CrossRefGoogle Scholar
5.Nakada, K., Fujita, M., Dresselhaus, G., Dresselhaus, M.S., Phys. Rev. B 54, 17954 (1996).CrossRefGoogle Scholar
6.Dimitrijev, S., Microelectron. Eng. 83, 123 (2006).CrossRefGoogle Scholar
7.Berger, C., Song, Z., Li, X., Wu, X., Brown, N., Naud, C., Mayou, D., Li, T., Hass, J., Marchenkov, A.N., Conrad, E.H., First, P.N., de Heer, W.A., Science 312, 1191 (2006).CrossRefGoogle Scholar
8.Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., Firsov, A.A., Science 306, 666 (2004).CrossRefGoogle Scholar
9.Eddy, C.R. Jr, Gaskill, D.K., Science 324, 1398 (2009).CrossRefGoogle ScholarPubMed
10.Emtsev, K.V., Bostwick, A., Horn, K., Jobst, J., Kellogg, G.L., Ley, L., McChesney, J.L., Ohta, T., Reshanov, S.A., Rohrl, J., Rotenberg, E., Schmid, A.K., Waldmann, D., Weber, H.B., Seyller, T., Nat. Mater. 8, 203 (2009).CrossRefGoogle Scholar
11.Hass, J., Varchon, F., Millán-Otoya, J.E., Sprinkle, M., Sharma, N., De Heer, W.A., Berger, C., First, P.N., Magaud, L., Conrad, E.H., Phys. Rev. Lett. 100, 125504 (2008).CrossRefGoogle Scholar
12.Moon, J.S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P.M., Jernigan, G., Tedesco, J.L., VanMil, B., Myers-Ward, R., Eddy, C., Gaskill, D.K., IEEE Electron Device Lett. 30, 650 (2009).CrossRefGoogle Scholar
13.Seyller, T., Bostwick, A., Emtsev, K.V., Horn, K., Ley, L., McChesney, J.L., Ohta, T., Riley, J.D., Rotenberg, E., Speck, F., Phys. Status Solidi B 245, 1436 (2008).CrossRefGoogle Scholar
14.Hass, J., de Heer, W.A., Conrad, E.H., J. Phys.: Condens. Matter 20, 323202 (2008).Google Scholar
15.Starke, U., Riedl, C., J. Phys.: Condens. Matter 21, 134016 (2009).Google Scholar
16.de Heer, W.A., Berger, C., Wu, X., First, P.N., Conrad, E.H., Li, X., Li, T., Sprinkle, M., Hass, J., Sadowski, M.L., Potemski, M., Martinez, G., Solid State Commun. 143, 92 (2007).CrossRefGoogle Scholar
17.Kim, K.S., Zhao, Y., Jang, H., Lee, S.Y., Kim, J.M., Kim, K.S., Ahn, J.-H., Kim, P., Choi, J.-Y., Hong, B.H., Nature 457, 706 (2009).CrossRefGoogle Scholar
18.Sutter, P.W., Flege, J.-I., Sutter, E.A., Nat. Mater. 7, 406 (2008).CrossRefGoogle Scholar
19.Pletikosic, I., Kralj, M., Pervan, P., Brako, R., Coraux, J., N'Diaye, A.T., Busse, C., Michely, T., Phys. Rev. Lett. 102, 056808 (2009).CrossRefGoogle Scholar
20.Li, X., Cai, W., An, J., Kim, S., Nah, J., Yang, D., Piner, R., Velamakanni, A., Jung, I., Tutuc, E., Banerjee, S.K., Colombo, L., Ruoff, R.S., Science 324, 1312 (2009).CrossRefGoogle Scholar
21.Brandt, C.D., Clarke, R.C., Siergiej, R.R., Casady, J.B., Sriram, S., Agarwal, A.K., Morse, A.W., in SiC Materials and Devices, Park, Y., Ed. (Academic Press, New York, 1998), vol. 52, pp. 195–236.CrossRefGoogle Scholar
22.Lauffer, P., Emtsev, K.V., Graupner, R., Seyller, T., Ley, L., Reshanov, S.A., Weber, H.B., Phys. Rev. B 77, 155426 (2008).CrossRefGoogle Scholar
23.Sun, D., Divin, C., Berger, C., de Heer, W.A., First, P.N., Norris, T.B., Phys. Rev. Lett. (2010), in press.Google Scholar
24. The Lemelson—MIT Program, “Edward Acheson—Carborundum,” (MIT, 2001); http://web.mit.edu/invent/iow/acheson.html.Google Scholar
25.van Bommel, A.J., Crombeen, J.E., van Tooren, A., Surf. Sci. 48, 463 (1975).CrossRefGoogle Scholar
26.Chang, C.S., Tsong, I.S.T., Wang, Y.C., Davis, R.F., Surf. Sci. 256, 354 (1991).CrossRefGoogle Scholar
27.Li, L., Tsong, I.S.T., Surf. Sci. 351, 141 (1996).CrossRefGoogle Scholar
28.Tsai, M.H., Chang, C.S., Dow, J.D., Tsong, I.S.T., Phys. Rev. B 45, 1327 (1992).CrossRefGoogle Scholar
29.Johansson, L.I., Owman, F., Martensson, P., Phys. Rev. B 53, 13793 (1996).CrossRefGoogle Scholar
30.Martensson, P., Owman, F., Johansson, L.I., Phys. Status Solidi B 202, 501 (1997).3.0.CO;2-H>CrossRefGoogle Scholar
31.Owman, F., Martensson, P., Surf. Sci. 369, 126 (1996).CrossRefGoogle Scholar
32.Charrier, A., Coati, A., Argunova, T., Thibaudau, F., Garreau, Y., Pinchaux, R., Forbeaux, I., Debever, J.M., Sauvage-Simkin, M., Themlin, J.M., J. Appl. Phys. 92, 2479 (2002).CrossRefGoogle Scholar
33.Forbeaux, I., Themlin, J.M., Charrier, A., Thibaudau, F., Debever, J.M., Appl. Surf. Sci. 162, 406 (2000).CrossRefGoogle Scholar
34.Rollings, E., Gweon, G.-H., Zhou, S.Y., Mun, B.S., McChesney, J.L., Hussain, B.S., Fedorov, A.V., First, P.N., de Heer, W.A., Lanzara, A., J. Phys. Chem. Solids 67, 2172 (2006).CrossRefGoogle Scholar
35.Ohta, T., Bostwick, A., Seyller, T., Horn, K., Rotenberg, E., Science 313, 951 (2006).CrossRefGoogle Scholar
36.McCann, E., Phys. Rev. B 74, 161403 (2006).CrossRefGoogle Scholar
37.Pimpinelli, A., Villain, J., Physics of Crystal Growth (Cambridge University Press, UK, 1998).CrossRefGoogle Scholar
38.Hass, J., Feng, R., Li, T., Li, X., Song, Z., de Heer, W.A., First, P.N., Conrad, E.H., Jeffrey, C.A., Berger, C., Appl. Phys. Lett. 89, 143106 (2006).CrossRefGoogle Scholar
39.Ohta, T., Bostwick, A., McChesney, J.L., Seyller, T., Horn, K., Rotenberg, E., Phys. Rev. Lett. 98, 206802 (2007).CrossRefGoogle Scholar
40.Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., Yamaguchi, H., Phys. Rev. B 77, 075413 (2008).CrossRefGoogle Scholar
41.Hannon, J.B., Tromp, R.M., Phys. Rev. B 77, 241404 (2008).CrossRefGoogle Scholar
42.Ohta, T., Gabaly, F.E., Bostwick, A., McChesney, J.L., Emtsev, K.V., Schmid, A.K., Seyller, T., Horn, K., Rotenberg, E., New J. Phys. 10, 023034 (2008).CrossRefGoogle Scholar
43.Bostwick, A., Ohta, T., Seyller, T., Horn, K., Rotenberg, E., Nat. Phys. 3, 36 (2007).CrossRefGoogle Scholar
44.Rutter, G.M., Crain, J.N., Guisinger, N.P., Li, T., First, P., Stroscio, J.A., Science 317, 219 (2007).CrossRefGoogle Scholar
45.Emtsev, K.V., Seyller, T., Speck, F., Ley, L., Stojanov, P., Riley, J.D., Leckey, R.G.C., paper presented at the 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, 3–7 September 2006.Google Scholar
46.Rutter, G.M., Guisinger, N.P., Crain, J.N., Jarvis, E.A.A., Stiles, M.D., Li, T., First, P.N., Stroscio, J.A., Phys. Rev. B 76, 235416 (2007).CrossRefGoogle Scholar
47.Nie, S., Feenstra, R.M., J. Vac. Sci. Technol., A 27, 1052 (2009).CrossRefGoogle Scholar
48.Emtsev, K.V., Speck, F., Seyller, T., Ley, L., Riley, J.D., Phys. Rev. B 77, 155303 (2008).CrossRefGoogle Scholar
49.Hass, J., Millán-Otoya, J.E., First, P.N., Conrad, E.H., Phys. Rev. B 78, 205424 (2008).CrossRefGoogle Scholar
50.Varchon, F., Feng, R., Hass, J., Li, X., Nguyen, B.N., Naud, C., Mallet, P., Veuillen, J.-Y., Berger, C., Conrad, E.H., Magaud, L., Phys. Rev. Lett. 99, 126805 (2007).CrossRefGoogle Scholar
51.Zhou, S.Y., Gweon, G.-H., Fedorov, A.V., First, P.N., de Heer, W.A., Lee, D.-H., Guinea, F., Castro Neto, A.H., Lanzara, A., Nat. Mater. 6, 770 (2007).CrossRefGoogle Scholar
52.Kim, S., Ihm, J., Choi, H.J., Son, Y.W., Phys. Rev. Lett. 100, 176802 (2008).CrossRefGoogle Scholar
53.Varchon, F., Mallet, P., Veuillen, J.-Y., Magaud, L., Phys. Rev. B 77, 235412 (2008).CrossRefGoogle Scholar
54.Guisinger, N.P., Rutter, G.M., Crain, J.N., First, P.N., Stroscio, J.A., Nano Lett. 9, 1462 (2009).CrossRefGoogle Scholar
55.Mallet, P., Varchon, F., Naud, C., Magaud, L., Berger, C., Veuillen, J.-Y., Phys. Rev. B 76, 041403 (2007).CrossRefGoogle Scholar
56.Hass, J., Feng, R., Millán-Otoya, J.E., Li, X., Sprinkle, M., First, P.N., Berger, C., de Heer, W.A., Conrad, E.H., Phys. Rev. B 75, 214109 (2007).CrossRefGoogle Scholar
57.Riedl, C., Starke, U., Bernhardt, J., Franke, M., Heinz, K., Phys. Rev. B 76, 245406 (2007).CrossRefGoogle Scholar
58.Rutter, G.M., Crain, J.N., Guisinger, N.P., First, P.N., Stroscio, J.A., J. Vac. Sci. Technol., A 26, 938 (2008).CrossRefGoogle Scholar
59.Hibino, H., Mizuno, S., Kageshima, H., Nagase, M., Yamaguchi, H., Phys. Rev. B 80, 085406 (2009).CrossRefGoogle Scholar
60.Seyller, T., Emtsev, K.V., Gao, K., Speck, F., Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Rader, O., Varykhalov, A., Shikin, A.M., Surf. Sci. 600, 3906 (2006).CrossRefGoogle Scholar
61.Huang, H., Chen, W., Chen, S., Wee, A.T.S., ACS Nano 2, 2513 (2008).CrossRefGoogle Scholar
62.Tromp, R.M., Hannon, J.B., Phys. Rev. Lett. 102, 106104 (2009).CrossRefGoogle Scholar
63.Virojanadara, C., Syväjarvi, M., Yakimova, R., Johansson, L.I., Zakharov, A.A., Balasubramanian, T., Phys. Rev. B 78, 245403 (2008).CrossRefGoogle Scholar
64.Virojanadara, C., Yakimova, R., Osiecki, J.R., Syväjärvi, M., Uhrberg, R.I.G., Johansson, L.I., Zakharov, A.A., Surf. Sci. 603, L87 (2009).CrossRefGoogle Scholar
65.Bostwick, A., Ohta, T., McChesney, J.L., Emtsev, K.V., Seyller, T., Horn, K., Rotenberg, E., New J. Phys. 9, 385 (2007).CrossRefGoogle Scholar
66.Vitali, L., Riedl, C., Ohmann, R., Brihuega, I., Starke, U., Kern, K., Surf. Sci. 602, L127 (2008).CrossRefGoogle Scholar
67.Rotenberg, E., Bostwick, A., Ohta, T., McChesney, J.L., Seyller, T., Horn, K., Nat. Mater. 7, 258 (2008).CrossRefGoogle Scholar
68.Zhou, S.Y., Siegel, D.A., Fedorov, A.V., Gabaly, F.E., Schmid, A.K., Neto, A.H.C., Lee, D.-H., Lanzara, A., Nat. Mater. 7, 259 (2008).CrossRefGoogle Scholar
69.Mucha-Kruczynski, M., Tsyplyatyev, O., Grishin, A., McCann, E., Fal′ko, V.I., Bostwick, A., Rotenberg, E., Phys. Rev. B 77, 195403 (2008).CrossRefGoogle Scholar
70.Polini, M., Asgari, R., Borghi, G., Barlas, Y., Pereg-Barnea, T., MacDonald, A.H., Phys. Rev. B 77, 081411 (2008).CrossRefGoogle Scholar
71.Park, C.-H., Giustino, F., Spataru, C.D., Cohen, M.L., Louie, S.G., Nano Lett. 9, 4234 (2009).CrossRefGoogle Scholar
72.McCann, E., Fal′ko, V.I., Phys. Rev. Lett. 96, 086805 (2006).CrossRefGoogle Scholar
73.Jobst, J., Waldmann, D., Speck, F., Hirner, R., Maude, D.K., Seyller, T., Weber, H.B., (2009), arXiv:0908.1900v1.Google Scholar
74.Siegel, D.A., Zhou, S.Y., Gabaly, F.E., Fedorov, A.V., Schmid, A.K., Lanzara, A., Appl. Phys. Lett. 93, 243119 (2008).CrossRefGoogle Scholar
75.Tzalenchukl, A., Lara-Avila, S., Kalaboukhov, A., Paolillo, S., Syväjärvi, M., Yakimova, R., Kazakova, O., Janssen, T.J.B.M., Fal′ko, V., Kubatkin, S., Nat. Nano., Advance Online Publication.Google Scholar
76.Shen, T., Gu, J.J., Xu, M., Wu, Y.Q., Bolen, M.L., Capano, M.A., Engel, L.W., Ye, P.D., Appl. Phys. Lett. 95, 172105 (2009).CrossRefGoogle Scholar
77.Zhang, Y., Tan, Y.-W., Stormer, H.L., Kim, P., Nature 438, 201 (2005).CrossRefGoogle Scholar
78.Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Katsnelson, M.I., Grigorieva, I.V., Dubonos, S.V., Firsov, A.A., Nature 438, 197 (2005).CrossRefGoogle Scholar
79.Irle, S., Wang, Z., Zheng, G.S., Morokuma, K., Kusunoki, M., J. Chem. Phys. 125, 044702 (2006).CrossRefGoogle Scholar
80.Wu, X., Hu, Y., Ruan, M., Madiomanana, N.K., Hankinson, J., Sprinkle, M., Berger, C., de Heer, W.A., Appl. Phys. Lett. 95, 223108 (2009).CrossRefGoogle Scholar
81.Hiebel, F., Mallet, P., Varchon, F., Magaud, L., Veuillen, J.-Y., Phys. Rev. B 78, 153412 (2008).CrossRefGoogle Scholar
82.Magaud, L., Hiebel, F., Varchon, F., Mallet, P., Veuillen, J.-Y., Phys. Rev. B 79, 161405 (2009).CrossRefGoogle Scholar
83.Varchon, F., Mallet, P., Magaud, L., Veuillen, J.-Y., Phys. Rev. B 77, 165415 (2008).CrossRefGoogle Scholar
84.Miller, D.L., Kubista, K.D., Rutter, G.M., Ruan, M., de Heer, W.A., First, P.N., Stroscio, J.A., Science 324, 924 (2009).CrossRefGoogle ScholarPubMed
85.Sprinkle, M., Siegel, D., Hu, Y., Hicks, J., Soukiassian, P., Tejeda, A., Taleb-Ibrahimi, A., Le Fèvre, P., Bertran, F., Berger, C., de Heer, W.A., Lanzara, A., Conrad, E.H., Phys. Rev. Lett. 103, 4 (2009).CrossRefGoogle Scholar
86.Biedermann, L.B., Bolen, M.L., Capano, M.A., Zemlyanov, D., Reifenberger, R.G., Phys. Rev. B 79, 125411 (2009).CrossRefGoogle Scholar
87.Jernigan, G.G., VanMil, B.L., Tedesco, J.L., Tischler, J.G., Glaser, E.R., Davidson, A., Campbell, P.M., Gaskill, D.K., Nano Lett. 9, 2605 (2009).CrossRefGoogle Scholar
88.Latil, S., Meunier, V., Henrard, L., Phys. Rev. B 76, 201402 (2007).CrossRefGoogle Scholar
89.Lopes dos Santos, J.M.B., Peres, N.M.R., Castro Neto, A.H., Phys. Rev. Lett. 99, 256802 (2007).CrossRefGoogle Scholar
90.Faugeras, C., Nerriere, A., Potemski, M., Mahmood, A., Dujardin, E., Berger, C., de Heer, W.A., Appl. Phys. Lett. 92, 011914 (2008).CrossRefGoogle Scholar
91.Ferrari, A.C., Meyer, J.C., Scardaci, V., Casiraghi, C., Lazzeri, M., Mauri, F., Piscanec, S., Jiang, D., Novoselov, K.S., Roth, S., Geim, A.K., Phys. Rev. Lett. 97, 187401 (2006).CrossRefGoogle Scholar
92.Ando, T., Nakanishi, T., Saito, R., J. Phys. Soc. Jpn. 67, 2857 (1998).CrossRefGoogle Scholar
93.Sadowski, M.L., Martinez, G., Potemski, M., Berger, C., de Heer, W.A., Phys. Rev. Lett. 97, 266405 (2006).CrossRefGoogle Scholar
94.Orlita, M., Faugeras, C., Plochocka, P., Neugebauer, P., Martinez, G., Maude, D.K., Barra, A.-L., Sprinkle, M., Berger, C., de Heer, W.A., Potemski, M., Phys. Rev. Lett. 101, 267601 (2008).CrossRefGoogle Scholar
95.Orlita, M., Faugeras, C., Martinez, G., Maude, D.K., Schneider, J.M., Sprinkle, M., Berger, C., de Heer, W.A., Potemski, M., Solid State Commun. 149, 1128 (2009).CrossRefGoogle Scholar
96.Bolotin, K.I., Sikes, K.J., Jiang, Z., Klima, M., Fudenberg, G., Hone, J., Kim, P., Stormer, H.L., Solid State Commun. 146, 351 (2008).CrossRefGoogle Scholar
97.Darancet, P., Wipf, N., Berger, C., de Heer, W.A., Mayou, D., Phys. Rev. Lett. 101, 116806 (2008).CrossRefGoogle Scholar
98.McCann, E., Kechedzhi, K., Fal′ko, V.I., Suzuura, H., Ando, T., Altshuler, B.L., Phys. Rev. Lett. 97, 146805 (2006).CrossRefGoogle Scholar
99.Wu, X., Li, X., Song, Z., Berger, C., de Heer, W.A., Phys. Rev. Lett. 98, 136801 (2007).CrossRefGoogle Scholar
100.Bekyarova, E., Itkis, M.E., Ramesh, P., Berger, C., Sprinkle, M., de Heer, W.A., Haddon, R.C., J. Am. Chem. Soc. 131, 1336 (2009).CrossRefGoogle Scholar
101.Kedzierski, J., Hsu, P.L., Healey, P., Wyatt, P.W., Keast, C.L., Sprinkle, M., Berger, C., de Heer, W.A., IEEE Trans. Electron Devices 55, 2078 (2008).CrossRefGoogle Scholar
102.Li, X., Wu, X., Sprinkle, M., Ming, F., Ruan, M., Hu, Y., Berger, C., de Heer, W.A., Phys. Status Solidi A 207, 286 (2010).CrossRefGoogle Scholar
103.Nguyen, L.D., Jelloian, L.M., Thompson, M., Lui, M., paper presented at the International Electron Devices Meeting, Technical Digest (Cat. N0.90CH2865–4), New York, 1990.Google Scholar
104.Akturk, A., Goldsman, N., J. Appl. Phys. 103, 053702 (2008).CrossRefGoogle Scholar
105.Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A.A., Starke, U., Phys. Rev. Lett. 103, 246804 (2009).CrossRefGoogle Scholar
106.Shivaraman, S., Barton, R.A., Yu, X., Alden, J., Herman, L., Chandrashekhar, M., Park, J., McEuen, P.L., Parpia, J.M., Craighead, H.G., Spencer, M.G., Nano Lett. 9, 3100 (2009).CrossRefGoogle Scholar
107.Sharma, N., PhD degree thesis, Georgia Institute of Technology (2009).Google Scholar