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What We Still Don't Know About Silicon

Published online by Cambridge University Press:  29 November 2013

David J. Eaglesham
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A question sometimes posed to researchers in silicon is: Why are you still working on silicon? How much more do we need to learn? Not only is Si a relatively simple element, it is one of the most common in the earth's crust. This element has been very extensively studied. One reason we keep studying silicon is because it is not just an element, it is also an industry. The microelectronics business has a massive economic impact on our lives. From cars to washing machines, almost all consumer goods contain silicon microprocessors in some form. Our daily lives depend on the stuff. Figure 1 shows the predominance of Si in a breakdown of the microelectronics industry. In 1994 microelectronics has been a $1 × 1011-per year industry worldwide, and it is still growing rapidly. CMOS, or complementary metal-oxide-semiconductor transistors, dominate this business, some being bipolar. The entire compound semiconductor industry is a small part of this picture, composing 2% of the business (although $2 billion is not bad for a “niche” market). The $100 billion business built around silicon makes it the most important element in world economics, although there is some evidence that C and O may also be important for the support of our daily lives. One thing, however, is clear-the economic need to understand silicon and everything it does is tremendous.

Type
Special Feature
Information
MRS Bulletin , Volume 19 , Issue 12 , December 1994 , pp. 57 - 60
Copyright
Copyright © Materials Research Society 1994

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References

1.Taylor, W., Marioton, B.P.R., Tan, T.Y., and Gosele, U., Radiation Effects and Defects in Solids 111/112 (1989) p. 131.CrossRefGoogle Scholar
2. See, for example, Stolk, P.A., Gossmann, H.-J., Eaglesham, D.J., and Poate, J.M., in 10th International Conference on Ion Implantation Technology (Catania, 1994).Google Scholar
3.Cowern, N.E.B., Janssen, K.T.F., and Jos, H.F.F., J. Appl. Phys. 68 (1990) p. 6191.CrossRefGoogle Scholar
4. See, for example, Jacobson, D.C., Kamgar, A., Eaglesham, D.J., Lloyd, E.J., Hillenius, S.J., and Poate, J.M., in 10th International Conference on Ion Implantation Technology (Catania, 1994).Google Scholar
5. See, for example, Eaglesham, D.J., Gossmann, H.-J., and Cerullo, M., Phys. Rev. Lett. 65 (1990).CrossRefGoogle Scholar
6. See, for example, Eaglesham, D.J., J. Appl. Phys. (1994).Google Scholar