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Advances in source technology for focused ion beam instruments

Published online by Cambridge University Press:  09 April 2014

Noel S. Smith ,
John A. Notte  and
Adam V. Steele
Noel S. Smith
Affiliation:
Oregon Physics LLC, [email protected]
John A. Notte
Affiliation:
Ion Microscopy Innovation Center at Carl Zeiss Microscopy, LLC; [email protected]
Adam V. Steele
Affiliation:
zeroK Nanotech Corporation; [email protected]
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Abstract

Owing to the development of new ion source technology, users of focused ion beams (FIBs) have access to superior performance when compared with the industry standard Ga+ liquid metal ion source. FIBs equipped with an inductively coupled plasma (ICP) ion source are better able to carry out large volume milling applications by providing up to 2 µA of Xe+ ions focused into a sub-5 µm spot. However, ICP FIBs are presently limited to 25 nm imaging resolution at 1 pA.The gas field ionization source (GFIS) relies upon an ion source that is the size of a single atom and correspondingly gains high brightness through its very small source size. The high brightness allows the GFIS to produce a very small focused probe size (<0.35 nm for helium), but with comparatively small beam currents (less than 2 pA). The Cs+ low temperature ion source, still being developed, has a projected sub-nm focal spot size at 1 pA, a maximum current of several nanoamps, and has the potential to offer integrated secondary ion mass spectrometry capabilities.

Keywords

Scanning probe microscopysecondary ion mass spectrometryion beam analysision beam assisted deposition
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 4: Focused Ion Beam Technology and Applications , April 2014 , pp. 329 - 335
Copyright
Copyright © Materials Research Society 2014 

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