Thermoelectric (TE) generators, converting waste heat to electricity regain their attractiveness for reduction of fossil fuels’ reliance, and consequently minimizing adverse environmental effects. Such generators are based on an electrical series connection of TE couples, which consist n- and p- type semiconducting legs divided by metallic bridges. While for intermediate temperatures of up to 500°C, n-type PbTe was extensively studied and employed in commercial TE power generation applications, its maximal efficiency, as was reflected by the TE figure of merit, ZT, was in most of the cases maximized at a narrow temperature range for any given donor dopant concentration. The most commonly applied donor dopants are iodine and bismuth. Yet, some interesting characteristics were recently proposed upon using Ti as a donor dopant. Up to date an impressive maximal ZT of ∼1.2 was obtained at 500°C, upon doping of PbTe by 0.1 at.% Ti, while no lower concentrations were ever investigated. In the current research a lower, 0.05 at.% Ti doping level was applied, leading to the highest ever reported ZT values, for any given Ti doped PbTe, up to 350°C. Since the chemical compatibility of Ti with PbTe, as a metallic bridge in such couples, is well established, mainly due to its low diffusion rates, the potential of generating a stable Ti-doped functionally graded n-type PbTe material, with enhanced TE performance, is currently being proposed.

The present work highlights the progress in the field of flexible thermoelectric generator (f-TEGs) fabricated by 3-D printing strategy on the typing paper substrate. In this study, printable thermoelectric paste was developed. The dimension of each planer thermoelectric element is 30mm*4mm with a thickness of 50 μm for P-type Bismuth Tellurium (Bi2Te3)-based/ poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) leg. A single thermoleg with this dimension can generate a voltage of 5.38 mV at a temperature difference of 70 K. The calculated Seebeck Coefficient of a single thermoleg is 76.86 μV/K. This work demonstrates that low-cost printing technology is promising for the fabrication of f-TEGs.

The search for nontoxic compositions in the thermoelectric field has motivated many researches to find alternatives to the toxic Pb-based systems, capable of reaching their high conversion efficiency. SnTe is gaining much attention during the past years due to its superior eco-friendly character, and its very similar crystal and band structure to that of PbTe. These makes SnTe a promising compound with great potential to answer the demand and use as a fair thermoelectric candidate. Most of the recently published studies mainly discuss the stoichiometric SnTe alloy. Only several focus on the effect of introducing excess tin/tellurium to the system. For that reason, this research aims to investigate in detail the nonstoichiometric SnxTe1-x co-doped by bismuth and indium/iodine, in an attempt to optimize the electronic properties.

Heat is the most ubiquitous form of energy on planet Earth. Every day, the sun continuously strikes the Earth’s surface with 120,000 Terawatts of energy. This solar energy is more than 10,000 times the amount of energy produced worldwide. With the scarcity of fossil fuels looming on the horizon and its adverse effect on the environment many researchers, from academia to industry, are exploring cleaner, greener and more efficient renewable energy technologies. Thermoelectricity can provide an alternative to hazardous fossil fuels as its electricity is produced directly from heat with no moving parts or working fluid. The efficiency of any thermoelectric material is given by a quantity called the figure of merit ZT. For thermoelectric (TE) devices to be competitive with fluid-based and other energy related devices, ZT greater than 2 is usually sought. Here, we report on the fabrication of thin film thermoelectric materials based on Bi2Te3/WS2 superlattice layer structure using RF magnetron sputtering deposition method. Quantum confinement in these low dimensional and ultrathin superlattices can enhance the density of states near the fermi level resulting in higher ZT value. The thermoelectric figure of merit can be enhanced by controlling the layer thickness close to the phonons mean free path. This way heat carrying phonons with different wavelengths can be scattered efficiently resulting in lower lattice thermal conductivity.

Thermoelectric materials can play an important role to develop a sustainable energy source for internet of things devices near room temperature. In this direction, it is important to have a thermoelectric material with high thermoelectric performance. Cesium tin triiodide (CsSnI3) single crystal perovskite has shown high value of Seebeck coefficient and ultra low thermal conductivity which are necessary conditions for high thermoelectric performance. Here, we report the thermoelectric response of CsSnI3 thin films. These films are prepared by cost effective wet spin coating process at different baking temperature. Films were characterized using X-ray diffraction and scanning electron microscopy. In our case, films baked at 130°C for 5 min have shown the best thermoelectric performance at room temperature with: Seebeck coefficient 115 μV/K and electrical conductivity 124 S/cm, thermal conductivity 0.36 W/m·K and figure of merit ZT of 0.137.

Polymeric conjugated materials are very promising for developing future soft material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent advantages such as flexibility, low-cost, ease of processability, and decreased harmful waste. Like their inorganic counterparts, the addition of certain dopants can significantly alter the electronic and optoelectronic properties of the host conjugated polymers or composites allowing modification for a variety of electronic/optoelectronic applications. One way to improve device performance is through the process of thermal annealing. Annealing allows for polymer matrices to self-assemble into a lower energy state which typically leads to increased crystallinity and higher charge mobility. In this work, we plan to evaluate the effects of annealing on doped P3HT films to understand its effects on optoelectronic and electronic properties focusing solely on crystallinity and charge carriers. Further understanding of the connection between annealing and doping in polymeric conjugated materials and thermoelectric properties will allow for an increase net output from multi-function materials and devices.