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Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains

Published online by Cambridge University Press:  01 March 2016

Zon ,
Thanavorn Poempool ,
Suwit Kiravittaya ,
Suwat Sopitpan ,
Supachok Thainoi ,
Songphol Kanjanachuchai ,
Somchai Ratanathammaphan  and
Somsak Panyakeow
Zon
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Thanavorn Poempool
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Suwit Kiravittaya
Affiliation:
Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok, Thailand
Suwat Sopitpan
Affiliation:
Thailand Microelectronic Center (TMEC), National Science and Technology Agency (NSTDA), Chachoensao, Thailand
Supachok Thainoi
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Songphol Kanjanachuchai
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Somchai Ratanathammaphan
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
Somsak Panyakeow*
Affiliation:
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand
*
*(Email: [email protected])
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Abstract

The effects of GaAs anti-phase domains (APDs) on the growth of GaSb quantum dots (QDs) are investigated by molecular beam epitaxial growth of GaAs on Ge (001) substrate. Ge is a group-IV element and GaAs is a polar III-V compound semiconductor. Due to polar/non polar interface, GaAs APDs are formed. Initial formation of APD relates to a non-uniform growth of high index GaAs surfaces. However, due to high sticking coefficient of Sb atoms at low substrate growth temperature, GaSb QDs can be formed on the whole surface of the sample without any effects from APD boundary. The buffer layer growth temperature is one of the key roles to control the APDs formation. Therefore we tried to adjust the optimum conditions such as buffer layer thickness and growth temperature to get nearly flat sample surface with large APDs for high QDs density (∼ 8×109 dots/cm2). Low-temperature photoluminescence is conducted and GaSb QDs peak is observed at the energy range of 1.0 eV-1.3 eV.

Keywords

molecular beam epitaxy (MBE)optoelectronicnanostructure
Type
Articles
Information
MRS Advances , Volume 1 , Issue 23: Electronics and Photonics , 2016 , pp. 1729 - 1734
Copyright
Copyright © Materials Research Society 2016 

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References

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