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In-situ X-ray Microscopy of Crack-Propagation to Study Fracture Mechanics of On-Chip Interconnect Structures

Published online by Cambridge University Press:  29 April 2018

Kristina Kutukova ,
Zhongquan Liao ,
Stephan Werner ,
Peter Guttmann ,
Yvonne Standke ,
Jürgen Gluch ,
Gerd Schneider  and
Ehrenfried Zschech
Kristina Kutukova*
Affiliation:
Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Straße 2, 01109Dresden, Germany
Zhongquan Liao
Affiliation:
Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Straße 2, 01109Dresden, Germany
Stephan Werner
Affiliation:
Helmholtz-Zentrum Berlin, Albert-Einstein-Straße 5, 12489Berlin, Germany
Peter Guttmann
Affiliation:
Helmholtz-Zentrum Berlin, Albert-Einstein-Straße 5, 12489Berlin, Germany
Yvonne Standke
Affiliation:
Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Straße 2, 01109Dresden, Germany
Jürgen Gluch
Affiliation:
Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Straße 2, 01109Dresden, Germany
Gerd Schneider
Affiliation:
Helmholtz-Zentrum Berlin, Albert-Einstein-Straße 5, 12489Berlin, Germany
Ehrenfried Zschech
Affiliation:
Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Straße 2, 01109Dresden, Germany
*
*(Email: [email protected])
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Abstract

Chip-package interaction (CPI) and the related thermomechanical stress in microchips increase the risk of failure in on-chip interconnect stacks, caused by delamination along Cu/dielectrics interfaces (adhesive failure) and fracture in dielectrics (cohesive failure). High-resolution transmission X-ray microscopy (TXM) is a unique technique to image crack propagation in on-chip interconnect stacks. The visualization of crack evolution in Cu/low-k Backend-of-Line (BEoL) structures is demonstrated using an experimental setup which combines high-resolution X-ray imaging with mechanical loading. The application of an indenter manipulator at the TXM beamline of the synchrotron radiation source BESSY II provides an unprecedented level of details on the fracture behavior of microchips. This in-situ experiment allows to identify the weakest layers and interfaces and to evaluate the robustness of the BEoL stack against CPI.

Keywords

fracturenanoscalemicroelectronicsin situadhesive
Type
Articles
Information
MRS Advances , Volume 3 , Issue 39: Characterization, Modeling and Theory , 2018 , pp. 2305 - 2310
Copyright
Copyright © Materials Research Society 2018 

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References

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