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Increased Spectrum Utilization with GaAsP/SiGe Solar Cells Grown on Silicon Substrates

Published online by Cambridge University Press:  16 May 2016

Anastasia H. Soeriyadi ,
Brianna Conrad ,
Xin Zhao ,
Dun Li ,
Li Wang ,
Anthony Lochtefeld ,
Andrew Gerger ,
Ivan Perez-Wurfl  and
Allen Barnett
Anastasia H. Soeriyadi
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, UNSW Australia (The University of New South Wales), Sydney 2052 Australia
Brianna Conrad
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, UNSW Australia (The University of New South Wales), Sydney 2052 Australia
Xin Zhao
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, UNSW Australia (The University of New South Wales), Sydney 2052 Australia
Dun Li
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, UNSW Australia (The University of New South Wales), Sydney 2052 Australia
Li Wang
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, UNSW Australia (The University of New South Wales), Sydney 2052 Australia
Anthony Lochtefeld
Affiliation:
AmberWave Inc., Salem, NH 03079 USA
Andrew Gerger
Affiliation:
SolAero Technologies Corp, Albuquerque, NM 87123, USA
Ivan Perez-Wurfl
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, UNSW Australia (The University of New South Wales), Sydney 2052 Australia
Allen Barnett*
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, UNSW Australia (The University of New South Wales), Sydney 2052 Australia
*
*(Email: [email protected])
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Abstract

World-record solar-to-electricity energy conversion efficiency has been previously achieved by photovoltaic devices that maximize the use of the solar spectrum, such as multi-junction tandem solar cells. These cells are made of III-V materials whose high cost is a strong limitation on their widespread commercial application. One solution to suppress the cost of these types of devices is to grow III-V solar cells on low-cost carrier materials such as silicon. We will discuss the material, structure and analysis of GaAsP/SiGe-on-silicon multi-junction tandem solar cells. A low threading dislocation density is realized by effective lattice-matching of the top and bottom cells which demonstrate a device that achieves high open-circuit voltage in the top solar cell. The GaAsP/SiGe solar cells have reached a measured efficiency of 20.6% under one sun concentration. Analysis of these results based on the product of the best parameters shows efficiency potential of 26% under one sun, 30.8% at 20× and 35.1% at 400×.

Keywords

photovoltaicdevicesIII-V
Type
Articles
Information
MRS Advances , Volume 1 , Issue 43: Energy and Environment , 2016 , pp. 2901 - 2906
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Green, M. A., Emery, K., Hishikawa, Y., Warta, W., and Dunlop, E. D., “Solar cell efficiency tables (Version 45),” Prog. Photovoltaics Res. Appl., vol. 23, no. 1, pp. 1–9, 2015.Google Scholar
Yamaguchi, M., Lee, K.-H., Araki, K., Kojima, N., and Ohshita, Y., “Potential and Activities of III-V/Si Tandem Solar Cells,” ECS J. Solid State Sci. Technol., vol. 5, no. 2, pp. Q68–Q73, 2016.Google Scholar
Lueck, M. R., Andre, C. L., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., and Ringel, S. A., “Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage,” IEEE Electron Device Lett., vol. 27, no. 3, pp. 142–144, 2006.CrossRefGoogle Scholar
Essig, S., Ward, S., Steiner, M. A., Friedman, D. J., Geisz, J. F., Stradins, P., and Young, D. L., “Progress Towards a 30% Efficient GaInP/Si Tandem Solar Cell,” Energy Procedia, vol. 77, pp. 464–469, 2015.Google Scholar
Green, M. A., “Commercial progress and challenges for photovoltaics,” Nat. Energy, vol. 1, p. 15015, 2016.Google Scholar
Schmieder, K. J., Gerger, A., Diaz, M., Pulwin, Z., Ebert, C., Lochtefeld, A., Opila, R., and Barnett, A., “Analysis of Tandem III-V / SiGe Devices Grown on Si,” in Proceedings of 38th IEEE PVSC, 2012, pp. 968–973.Google Scholar
Fitzgerald, E. A., Xie, Y. H., Green, M. L., Brasen, D., Kortan, A. R., Michel, J., Mii, Y. J., and Weir, B. E., “Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substrates,” Appl. Phys. Lett., vol. 59, no. 7, pp. 811–813, 1991.CrossRefGoogle Scholar
Andre, C. L., Boeckl, J. J., Wilt, D. M., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., Keyes, B. M., and Ringel, S. A., “Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates,” Appl. Phys. Lett., vol. 84, no. 18, pp. 3447–3449, 2004.CrossRefGoogle Scholar
Wang, L., Conrad, B., Soeriyadi, A., Zhao, X., Li, D., Diaz, M., Lochtefeld, A., Gerger, A., Perez-Wurfl, I., and Barnett, A., “Current matched three-terminal dual junction GaAsP/SiGe tandem solar cell on Si,” Sol. Energy Mater. Sol. Cells, vol. 146, pp. 80–86, 2016.Google Scholar
Diaz, M., Wang, L., Li, D., Zhao, X., Conrad, B., Soeriyadi, A., Gerger, A., Lochtefeld, A., Ebert, C., Opila, R., Perez-Wurfl, I., and Barnett, A., “Tandem GaAsP/SiGe on Si solar cells,” Sol. Energy Mater. Sol. Cells, vol. 143, pp. 113–119, 2015.Google Scholar
Zhao, X., Li, D., Conrad, B., Wang, L., Soeriyadi, A. H., Diaz, M., Lochtefeld, A., Gerger, A., Perez-Wurfl, I., and Barnett, A., “Material and device analysis of SiGe solar cell in a GaAsP-SiGe dual junction solar cell on Si substrate,” Sol. Energy Mater. Sol. Cells, vol. 134, pp. 114–121, 2015.CrossRefGoogle Scholar
Conrad, B., Zhang, T., Lochtefeld, A., Gerger, A., Ebert, C., Diaz, M., Wang, L., Perez-Wurf, I., and Barnett, A., “Double layer antireflection coating and window optimization for GaAsP/SiGe tandem on Si,” in Proceedings of 40th IEEE PVSC, 2014, pp. 1143–1147.CrossRefGoogle Scholar
Soeriyadi, A. H., Wang, L., Conrad, B., Diaz, M., Zhao, X., Li, D., Lochtefeld, A., Gerger, A., Barnett, A., and Perez-Wurfl, I., “A Direct Method of Analysing the Current Matching Condition in a Multi-Junction Solar Cell,” in proceedings of 31st EU PVSEC, 2015, pp. 1456 – 1460.Google Scholar
Wang, L., Diaz, M., Conrad, B., Zhao, X., Li, D., Soeriyadi, A., Gerger, A., Lochtefeld, A., Ebert, C., Perez-wurfl, I., and Barnett, A., “Material and Device Improvement of GaAsP Top Solar Cells for GaAsP / SiGe Tandem Solar Cells Grown on Si Substrates,” IEEE J. Photovoltaics, vol. 5, no. 6, pp. 1800–1804, 2015.Google Scholar
Li, D., Zhao, X., Gerger, A., Opila, R., Wang, L., Conrad, B., Soeriyadi, A. H., Diaz, M., Lochtefeld, A., Barnett, A., and Perez-Wurfl, I., “Optical constants of silicon germanium films grown on silicon substrates,” Sol. Energy Mater. Sol. Cells, vol. 140, pp. 69–76, 2015.Google Scholar
Zhao, X., Li, D., Conrad, B., Wang, L., Soeriyadi, A. H., Diaz, M., Lochtefeld, A., Gerger, A., Perez-Wurfl, I., and Barnett, A., “Short ciruit current improvement of SiGe solar cell in a gallium arsenide phosphide - silicon germanium dual junction solar cell on Si substrate,” in Proceedings of 42nd IEEE PVSC, 2015, pp. 1–3.Google Scholar
Conrad, B., Zhao, X., Li, D., Wang, L., Diaz, M., Soeriyadi, A., Lochtefeld, A., Gerger, A., Barnett, A., and Perez-Wurfl, I., “Window optimization enabling broadband double-layer antireflection coating for GaAsP/SiGe tandem on silicon,” Sol. Energy, vol. 127, pp. 216–222, 2016.Google Scholar
Erdtmann, M., Carroll, M., Carlin, J., Langdo, T. A., Westhoff, R., Leitz, C., Yang, V., Currie, M. T., Lochtefeld, A., and Petrocelli, K., “Growth and Characterization of High-Ge Content SiGe Virtual Substrates,” in Proceedings of Electrochemical Society, 2003, no. 11, pp. 106–117.Google Scholar
Faucher, J., Gerger, A., Tomasulo, S., Ebert, C., Lochtefeld, A., Barnett, A., and Lee, M. L., “Single-junction GaAsP solar cells grown on SiGe graded buffers on Si,” Appl. Phys. Lett., vol. 103, no. 19, p. 191901, 2013.Google Scholar
Soeriyadi, A. H., Lochtefeld, A., Gerger, A., Ebert, C., Barnett, A., and Perez-Wurfl, I., “GaAsP Hall mobility characterization for GaAsP/SiGe tandem solar cell on Si substrate,” in Proceedings of 40th IEEE PVSC, 2014, pp. 1186–1188.CrossRefGoogle Scholar
Schmieder, K. J., Gerger, A., Diaz, M., Pulwin, Z., Curtin, M., Wang, L., Ebert, C., Lochtefeld, A., Opila, R. L., and Barnett, A., “GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance,” Mater. Sci. Semicond. Process., vol. 39, pp. 614–620, 2015.CrossRefGoogle Scholar
Schmieder, K. J., Gerger, A., Pulwin, Z., Wang, L., Diaz, M., Curtin, M., Ebert, C., Lochtefeld, A., Opila, R. L., and Barnett, A., “GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells,” in Proceedings of 39th IEEE PVSC, 2013, pp. 2462–2465.Google Scholar