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Electroluminescence Enhancement via Grating on a Si-based Plasmonic Metal-Insulator-Semiconductor Tunnel Junction
Published online by Cambridge University Press: 08 January 2016
Abstract
Here we fabricated and characterized a CMOS compatible metal-insulator-semiconductor (MIS) plasmonic tunnel junction for Si-based photonic circuitry. A grating structure was realized on MIS plasmonic tunnel junction via focused-ion-beam milling (FIB) to increase the intensity of the light emission that occurs during inelastic electron tunneling. Approximately 65 times higher intensity of light emission is achieved with the grating structure during the measurements.
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- Copyright © Materials Research Society 2016
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