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Effects of Long-Time Current Annealing to the Hysteresis in CVD Graphene on SiO2

Published online by Cambridge University Press:  02 October 2019

U. Kushan Wijewardena ,
Tharanga Nanayakkara ,
Rasanga Samaraweera ,
Sajith Withanage ,
Annika Kriisa  and
Ramesh G. Mani
U. Kushan Wijewardena
Affiliation:
Department of Physics & Astronomy, Georgia State University, Atlanta, GA30303, USA
Tharanga Nanayakkara
Affiliation:
Department of Physics & Astronomy, Georgia State University, Atlanta, GA30303, USA
Rasanga Samaraweera
Affiliation:
Department of Physics & Astronomy, Georgia State University, Atlanta, GA30303, USA
Sajith Withanage
Affiliation:
Department of Physics & Astronomy, Georgia State University, Atlanta, GA30303, USA
Annika Kriisa
Affiliation:
Department of Physics & Astronomy, Georgia State University, Atlanta, GA30303, USA
Ramesh G. Mani*
Affiliation:
Department of Physics & Astronomy, Georgia State University, Atlanta, GA30303, USA
*
*(Email: [email protected])
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Abstract

Graphene specimens produced by chemical vapor deposition usually show p-type characteristics and significant hysteresis in ambient conditions. Among many methods, current annealing appears to be a better way of cleaning the sample due to the possibility of in-situ annealing in the measurement setup. However, long-time current annealing could increase defects in the underlying substrate. Studying the hysteresis with different anneal currents in a graphene device is, therefore, a topic of interest. In this experimental work, we investigate electron/hole transport in a graphene sample in the form of a Hall bar device with a back gate, where the graphene was prepared using chemical vapor deposition on copper foils. We study the hysteresis before and after current annealing the sample by cooling down to a temperature of 35 Kfrom room temperature with a back-gate bias in a closed cycle refrigerator.

Keywords

2D materialsannealing
Type
Articles
Information
MRS Advances , Volume 4 , Issue 61-62: International Materials Research Congress XXVIII , 2019 , pp. 3319 - 3326
Copyright
Copyright © Materials Research Society 2019 

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