Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T09:15:07.410Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of the effect of the deposition RF power on the characteristics of microcrystalline Silicon-Germanium thin films produced by PECVD

Published online by Cambridge University Press:  02 January 2019

Arturo Torres ,
Mario Moreno ,
Pedro Rosales ,
Miguel Domínguez ,
Alfonso Torres ,
Adrian Itzmoyotl ,
Roberto Ambrosio  and
Javier de la Hidalga
Arturo Torres*
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Mario Moreno
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Pedro Rosales
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Miguel Domínguez
Affiliation:
Meritorious Autonomous University of Puebla, BUAP, Puebla, México
Alfonso Torres
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Adrian Itzmoyotl
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
Roberto Ambrosio
Affiliation:
Meritorious Autonomous University of Puebla, BUAP, Puebla, México
Javier de la Hidalga
Affiliation:
National Institute of Astrophysics Optics and Electronics, INAOE, Puebla, México
*
*(Email: [email protected])
Get access

Abstract

Hydrogenated microcrystalline Silicon-Germanium (μc-SiGe:H) thin films were deposited using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique from a gas mixture of SiH4, GeH4, H2 and Ar at a substrate temperature of 200 ° C. The films were deposited at a pressure of 1.5 Torr, while the RF power was varied in the range of 20 W to 35 W. Structural, optical and electrical characterization was performed in the films, Fourier Transform Infrared Spectroscopy (FTIR) was performed in order to analyze the hydrogen bonding of silicon and germanium, while Raman spectroscopy was used in order to analyze the crystallinity of the films. Through the optical and electrical characterization of the films, parameters such as the optical band gap (Eg) and the activation energy (EA) were obtained, respectively. The conductivity of the films changed up two to orders of magnitude from dark conditions to illumination AM 1.5. Finally, the correlation between deposition RF power and the film properties is presented.

Keywords

Raman spectroscopyplasma-enhanced CVD (PECVD) (deposition)infrared (IR) spectroscopySiGe
Type
Articles
Information
MRS Advances , Volume 3 , Issue 64: International Materials Research Congress XXVII , 2018 , pp. 3939 - 3947
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kim, S., Park, C., Lee, J. C., Cho, J. S., and Kim, Y., J. Curr. Appl. Phys. 13, 457–460, (2013).CrossRefGoogle Scholar
Domínguez, M., Rosales, P., Torres, A., Moreno, M., Molina, J., De Hidalga, F., Zúñiga, C., and Calleja, W., J. Non. Cryst. Solids, 358, 2340–2343, (2012).CrossRefGoogle Scholar
Tang, Z., Wang, W., Wang, D., Liu, D., Liu, Q., Yin, M., He, D., J. Appl. Surf. Sci., 256, 7032–7036, (2010)CrossRefGoogle Scholar
Xu, R., Li, W., He, J., Sun, Y., and Jiang, Y. D., J. Non Cryst. Solids, 365, 37–42, (2013).CrossRefGoogle Scholar
Zhang, L., Zhang, J., Zhang, X., Cao, Y., and Zhao, Y., J. Thin Solid Films, 520, 5940–5945, (2012).CrossRefGoogle Scholar
Bouizem, Y., Belfedal, A., Sib, J. D., Kebab, a, and Chahed, L., J. Phys. Condens. Matter, 17, 5149–5158, (2005).CrossRefGoogle Scholar
Li, T., Zhang, J., Cao, Y., Huang, Z., Jun, J., Ni, J., and Zhao, Y., J. Optoelectron. Lett., 10, 202–205, (2014).CrossRefGoogle Scholar
Chou, Y.-P. and Lee, S.-C., J. appl. phys. 83, 4111, (1998).CrossRefGoogle Scholar
Yan, B., Zhao, L., Zhao, B., Chen, J., Wang, G., Diao, H., Mao, Y., and Wang, W., J. Vacuum, 89, 43–46, (2013).CrossRefGoogle Scholar
Li, T., Zhang, J., Cao, Y., Huang, Z., Ma, J., Ni, J., and Zhao, Y., J. Optoelectron. Lett. 10, 202– 205, (2014).CrossRefGoogle Scholar
Rath, J. K., Tichelaar, F. D., and Schropp, R. E. I., J. Sol. Energy Mater. Sol. Cells, 74, 553–560, (2002).CrossRefGoogle Scholar
Ganguly, G., Ikeda, T., Nishimiya, T., Saitoh, K., Kondo, M., and Matsuda, A., J. Appl. Phys. Lett. 69, 4224–4226, (1996).CrossRefGoogle Scholar
Tanaka, K. and Matsuda, A., J. Thin solid Films. 163, 123–130, (1988).CrossRefGoogle Scholar
Kim, S., Park, C., Lee, J.-C., Cho, J.-S., and Kim, Y., J. Thin Solid Films, 534, 214–217, (2013).CrossRefGoogle Scholar