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Room Temperature Fabrication of (ZnO)x(InN)1-xfilms with Step-Terrace Structure by RF Magnetron Sputtering

Published online by Cambridge University Press:  06 January 2016

Koichi Matsushima*
Affiliation:
Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0385, Japan
Tomoaki Ide
Affiliation:
Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0385, Japan
Daisuke Yamashita
Affiliation:
Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0385, Japan
Hyunwoong Seo
Affiliation:
Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0385, Japan
Kazunori Koga
Affiliation:
Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0385, Japan
Masaharu Shiratani
Affiliation:
Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0385, Japan
Naho Itagaki
Affiliation:
Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0385, Japan
*
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Abstract

We study effects of deposition temperature on growth mode and surface morphologyof hetero-epitaxial (ZnO)x(InN)1-x (ZION) films on ZnOtemplates. ZION films deposited at low temperature of RT-250oC growtwo dimensionally, whereas ZION films deposited at high temperature of350-450oC grow three dimensionally. Growth mode is changed fromtwo-dimensional growth mode to three-dimensional one, because the criticalthickness where film strain begin to relax decreases with increasing thedeposition temperature. At high deposition temperatures, the number of pointdefects in ZION films decreases because migration of adatoms on the growingsurface is enhanced. The strain energy in ZION films increases with increasingthe deposition temperature, since the strain energy is not released by pointdefects. Therefore, lattice relaxation for the higher deposition temperaturebegins at the smaller film thickness to release the strain energy. As a result,ZION films with atomically-flat surface were obtained even at RT.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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