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Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration

Published online by Cambridge University Press:  10 May 2016

J.F. Michaud*
Affiliation:
Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
R. Khazaka
Affiliation:
Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France CRHEA, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France
M. Portail
Affiliation:
CRHEA, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France
G. Andrä
Affiliation:
Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany
J. Bergmann
Affiliation:
Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany
D. Alquier
Affiliation:
Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
*
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Abstract

The cubic polytype of silicon carbide is a stimulating candidate for Micro-Electro-Mechanical-Systems (MEMS) applications due to its interesting physical and chemical properties. Recently, we demonstrated the possibility to elaborate 3C-SiC membranes on 3C-SiC pseudo-substrates, using a silicon epilayer grown by Low Pressure Chemical Vapor Deposition as a sacrificial layer. Such structures could be the starting point for the elaboration of new MEMS devices. However, the roughness still represents a major concern. Therefore, in this contribution, we investigate the influence of an excimer laser irradiation on the Si epilayer surface prior to the 3C-SiC epilayer growth. We compare these results with the 3C-SiC epilayer grown directly on the as-grown Si epilayer.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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