Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-24T13:28:30.493Z Has data issue: false hasContentIssue false
  • English
  • Français

Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

Published online by Cambridge University Press:  12 January 2017

Philip Hens ,
Ryan Brow ,
Hannah Robinson  and
Bart Van Zeghbroeck
Philip Hens*
Affiliation:
University of Colorado Boulder, ECEE Department, CB 425, Boulder, CO 80309, USA
Ryan Brow
Affiliation:
BASiC 3C, Inc., 1830 Boston Avenue, Longmont, CO 80501, USA
Hannah Robinson
Affiliation:
BASiC 3C, Inc., 1830 Boston Avenue, Longmont, CO 80501, USA
Bart Van Zeghbroeck
Affiliation:
University of Colorado Boulder, ECEE Department, CB 425, Boulder, CO 80309, USA BASiC 3C, Inc., 1830 Boston Avenue, Longmont, CO 80501, USA
*
*(Email: [email protected])
Get access

Abstract

For the first time, we are reporting the growth of high quality single crystalline 3C-SiC epitaxially on hexagonal silicon carbide substrates using Hot Filament Chemical Vapor Deposition (HF-CVD) on full 4” wafers. Rocking curve X-Ray diffraction (XRD) measurements resulted in a full width at half maximum (FWHM) as low as 88 arcsec for a 40 µm thick layer. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. The filaments allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to conventional Chemical Vapor Deposition. Growth rates of up to 8 µm/h were achieved with standard silane and propane chemistry, and further increased to 20 µm/h with chlorinated chemistry. The use of silicon carbide substrates promises superior layer quality compared to silicon substrates due to their better match in lattice parameters and thermal expansion coefficients. High resolution scanning electron microscopy, X-Ray rocking measurements, and micro-Raman allow us to assess the crystalline quality of our material and to compare it to layers grown on low-cost silicon substrates. Hall measurements reveal a linear increase of the charge carrier density in the material with the flow of nitrogen gas as a dopant. Electron densities above 10-18 cm-3 have been reached.

Keywords

semiconductingchemical vapor deposition (CVD) (deposition)epitaxy
Type
Articles
Information
MRS Advances , Volume 2 , Issue 5: Electronics, Magnetics and Photonics , 2017 , pp. 289 - 294
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Severino, A., “3C-SiC epitaxial growth on large area silicon: Thin films,” Silicon Carbide Epitaxy, 2012: 145–191 ISBN: 978-81-308-0500-9 Chapter 7, Editor: La Via, Francesco Google Scholar
Wu, Z. et al., “Epitaxial growth of SiC films at low temperature and its photoluminescence,“ IEEE proceedings Solid State and Integrated Circuit Technology (2006)Google Scholar
Yasui, K. et al., “Low-Temperature Heteroepitaxial Growth of SiC on (100) Si Using Hot-Mesh Chemical Vapor Deposition,” Japanese Journal of Applied Physics Vol. 44, No. 3 (2005), 1361–1364 Google Scholar
Mao, H-Y. et al., “Hot-Wire chemical vapor deposition and characterization pf p-type nanocrystalline SiC films and their use in Si heterojunction solar cells,” Thin Solid Films 520 (2012), 2110–2114 Google Scholar
Zhang, Z. et al., “Epitaxial monocrystalline SiC films grown on Si by HFCVD at 780°C,” Materials Science and Engineering B75 (2000), 177–179 Google Scholar
Robbins, J. and Seman, M., “Production of bulk silicon carbide with hot-filament chemical vapor deposition,” United States Patent # 8,409,351, Issued April 2, 2013 Google Scholar
Nakashima, S. et al., “Raman Investigation of SiC Polytypes,” phys. stat. sol. (a) 162 (1997), 39 Google Scholar
Pedersen, H. et al., “Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications” Chem. Rev., 2012, 112 (4), 2434–2453 Google Scholar