We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.
To save this undefined to your undefined account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your undefined account.
Find out more about saving content to .
To save this article to your Kindle, first ensure [email protected] is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.
A major issue in low voltage lithography is surface charging, which
results in beam deflection presented as uneven exposure between
adjacent structures. In this study, charge-induced pattern distortions
in low-voltage energy beam lithography (LVEBL) were investigated using
a silicide direct-write electron beam lithography process. Two
methodologies have been proposed to avert charging effects in LVEBL,
namely, pattern randomizing and lithography using the crossover
voltage. Experimental results demonstrated that these methods are
effective in significantly reducing the problems associated with
charging. They indicate that charging on a sample is a function of time
interval and proximity between line structures. In addition, the
optimum time and distance between exposures for no charge-induced
pattern distortion were determined. By using the crossover voltage of
the material for lithography, charging effect can be significantly
minimized.
We propose the formation of LEED patterns using a highly convergent
beam forming a probe of nanometer dimensions. A reflection rocking
curve may then be recorded in many diffraction orders simultaneously.
Multiple scattering calculations show that the intensity variations
within these rocking curves is as sensitive to the parameters
describing the surface dipole layer as conventional I/V scans.
However the data may be collected from areas sufficiently small to
avoid defects and surface steps, radiation damage controlled by use of
low voltages, and the information depth selected by choice of the
(constant) voltage. We briefly discuss also the application of this
method to oxides and the formation of atomic-resolution scanning images
in an idealized instrument in which coherent diffracted LEED orders
overlap.
About 1 monolayer of palladium was deposited onto a silicon (111) 7
× 7 surface at a temperature of about 550 K inside an ultrahigh
vacuum transmission electron microscope, resulting in formation of
Pd2Si nanoislands and a 1 × 1 surface layer. Pd
clusters created from an excess of Pd atoms on the 1 × 1 surface
layer were directly observed by in situ plan view
high-resolution transmission electron microscopy. When an objective
aperture was introduced so that electron diffractions less than 0.20 nm
were filtered out, the lattice structure of the 1 × 1 surface
with 0.33 nm spacing and the Pd clusters with a trimer shape were
visualized. It was found that image contrast of the 1 × 1 lattice
on the specific height terraces disappeared, and thereby an atomic
structure of the Pd clusters was clearly observed. The appearance and
disappearance of the 1 × 1 lattice was explained by the effect of
the kinematical diffraction. It was identified that a Pd cluster was
composed of three Pd atoms without a centered Si atom, which is
consistent with the model proposed previously. The feature of the Pd
clusters stuck at the surface step was also described.
Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.
Following is a list of microscopy-related meetings and courses. The
editors would greatly appreciate input to this list via the electronic
submission form found in the MSA World-Wide Web page at
http://www.msa.microscopy.com. We will gladly add hypertext
links to the notice on the web and insert a listing of the meeting in
the next issue of the Journal. Send comments and questions to JoAn
Hudson, [email protected] or Nestor Zaluzec,
[email protected].
Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.
InxGa1−xAs quantum dots
in GaP(100) crystals prepared by the OMVPE technique are observed along
the [011] direction with a newly developed 200-kV spherical
aberration(Cs)-corrected HRTEM, a 200-kV annular dark-field
(ADF)-STEM, and a 200-kV conventional HRTEM equipped with a thermal
field-emission gun. The dots are 6–10 nm in size and strongly
strained due to the misfit of about 9% with the GaP substrate and GaP
cap layer. All of the cross-sectional high-resolution electron
micrographs show dumbbell images of Ga and P atomic columns separated
by 0.136 nm in well-oriented and perfect GaP areas, but the
interpretable images are limited to those taken with the
Cs-corrected HRTEM and ADF-STEM with Fourier filtering of
the images. The Cs-corrected HRTEM and ADF-STEM are
comparable from the viewpoint of interpretable resolution. A detailed
comparison between the Cs-corrected HRTEM images and the
simulated ones with electron incidence tilted by 1° to 5° from
the [011] zone axis gives information on local lattice
bending in the dots from the images around 0.1 nm resolution. This
becomes one of the useful techniques newly available from electron
microscopy with sub-Ångstrom resolution.
Magnetic structures of Co/Cu multilayers in cross section are
observed by two kinds of electron holography: a Fourier method and a
phase-shifting method, which is introduced briefly. The Fourier method
can easily reconstruct wave functions and is applied to many specimens,
whereas the phase-shifting method requires longer time for processing,
but has a higher spatial resolution that permits us to discuss fine
structures. Magnetization vectors in Co layers aligning parallel and
separating into two blocks with antiparallel alignment are observed.
Magnetic blurring on the boundary between Co and Cu in the
reconstructed phase images is larger than the estimated atomic
roughness.
Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.
Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.
Unraveling Magnetic Structure at the Nanoscale to Understand Magnetic Properties