Very low energy electrons in a solid should behave like Bloch electrons and will interact with perturbations of the atomic lattice, that is, with phonons. So we use the acoustic phonon scattering for replacing the elastic binary encounter approximation of the Mott scattering for electrons with low energies E < 100 eV. For ballistic electrons (1 eV < E < Eg) and higher energies up to 1 keV we determined the acoustic phonon scattering and the impact ionization rate by means of the “backscattering-versus-range” proof and respective η(E0) − R(E0) diagrams. Electron trajectories demonstrate the relatively short range of primary electrons (PE) with energies E > 50 eV due to strong impact ionization losses (cascading) and the much greater range of secondary electrons (SE) with E < 50 eV, finally as a consequence of less effective phonon losses. The field-dependent transport parameters allow us to model the self-consistent charge transport and charging-up of insulating SiO2 layers during electron bombardment maintained by the current components of primary electrons jPE, secondary electrons jSE, and associated ballistic holes jBH, as well as by Fowler–Nordheim field injection jFN from the substrate. The resulting distributions of currents j(x,t), charges ρ(x,t), electric fields F(x,t), and the potential V(x,t) across the dielectric layer explain the phenomena of field-enhanced and field-blocked secondary electron emission with rates δ [gel ] 1.

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We report that atomic force microscopy (AFM) studies on structural variations of a linear plasmid DNA interact with various concentrations of vincristine sulfate and aspirin. The different binding images show that vincrinstine sulfate binding DNA chains caused some loops and cleavages of the DNA fragments, whereas aspirin interaction caused the width changes and conformational transition of the DNA fragments. Two different DNA structural alternations could be explained by the different mechanisms of the interactions with these two components. Our work indicates that the AFM is a powerful tool in studying the interaction between DNA and small molecules.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Acidocalcisomes are acidic calcium storage compartments described initially in trypanosomatid and apicomplexan parasites, and recently found in other unicellular eukaryotes. The aim of this study was to identify the presence of acidocalcisomes in the plant trypanosomatid Phytomonas françai. Electron-dense organelles of P. françai were shown to contain large amounts of oxygen, sodium, magnesium, phosphorus, potassium, calcium, iron, and zinc as determined by X-ray microanalysis, either in situ or when purified using iodixanol gradient centrifugation or by elemental mapping. The presence of iron is not common in other acidocalcisomes. In situ, but not when purified, these organelles showed an elongated shape differing from previously described acidocalcisomes. However, these organelles also possessed a vacuolar H+-pyrophosphatase (V-H+-PPase) as determined by biochemical methods and by immunofluorescence microscopy using antibodies against the enzyme. Together, these results suggest that the electron-dense organelles of P. françai are homologous to the acidocalcisomes described in other trypanosomatids, although with distinct morphology and elemental content.

John Cowley and his group at Arizona State University pioneered the use of transmission electron microscopy (TEM) for high-resolution imaging. Three decades ago they achieved images showing the crystal unit cell content at better than 4 Å resolution. Over the years, this achievement has inspired improvements in resolution that have enabled researchers to pinpoint the positions of heavy atom columns within the cell. More recently, this ability has been extended to light atoms as resolution has improved. Sub-Ångstrom resolution has enabled researchers to image the columns of light atoms (carbon, oxygen, and nitrogen) that are present in many complex structures. By using sub-Ångstrom focal-series reconstruction of the specimen exit surface wave to image columns of cobalt, oxygen, and lithium atoms in a transition metal oxide structure commonly used as positive electrodes in lithium rechargeable batteries, we show that the range of detectable light atoms extends to lithium. HRTEM at sub-Ångstrom resolution will provide the essential role of experimental verification for the emergent nanotech revolution. Our results foreshadow those to be expected from next-generation TEMs with CS-corrected lenses and monochromated electron beams.

Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Promastigotes of the protozoan parasite genus Leishmania are inoculated into a mammalian host when an infected sand fly takes a bloodmeal. Following their opsonization by complement, promastigotes are phagocytosed by macrophages. There, promastigotes differentiate into amastigotes, the form of the parasite that replicates in the phagolysosomal compartments of host macrophages. Although the mechanisms by which promastigotes survive the microbicidal consequence of phagocytosis remain, for the most part, to be elucidated, evidence indicates that glycoconjugates play a role in this process. One such glycoconjugate is lipophosphoglycan, an abundant promastigote surface glycolipid. Using quantitative electron and confocal laser scanning microscopy approaches, evidence was provided that L. donovani promastigotes inhibit phagolysosome biogenesis in a lipophosphoglycan-dependent manner. This inhibition correlates with an accumulation of periphagosomal F-actin, which may potentially form a physical barrier that prevents L. donovani promastigote-containing phagosomes from interacting with endocytic vacuoles. Inhibition of phagosome maturation may constitute a strategy to provide an environment propitious to the promastigote-to-amastigote differentiation.

We have achieved atomic-resolution imaging of single dopant atoms buried inside a crystal, a key goal for microelectronic device characterization, in Sb-doped Si using annular dark-field scanning transmission electron microscopy. In an amorphous material, the dopant signal is largely independent of depth, but in a crystal, channeling of the electron probe causes the image intensity of the atomic columns to vary with the depths of the dopants in each column. We can determine the average dopant concentration in small volumes, and, at low concentrations, the depth in a column of a single dopant. Dopant atoms can also serve as tags for experimental measurements of probe spreading and channeling. Both effects remain crucial even with spherical aberration correction of the probe. Parameters are given for a corrected Bloch-wave model that qualitatively describes the channeling at thicknesses <20 nm, but does not account for probe spreading at larger thicknesses. In thick samples, column-to-column coupling of the probe can make a dopant atom appear in the image in a different atom column than its physical position.

Charging phenomena of a mask material during electron beam exposure are analyzed in an electron beam projection lithography system. First, the three-dimensional charge deposition distribution by the electron beam irradiation is obtained. Next, in every time step, the distributions of the accumulated charge and the potential are obtained considering the current flow due to the diffusion and the drift. As a narrow bridge pattern defined in a 5 μm × 5 μm area is assumed to lay out all over the field of 1 mm × 1 mm and the potential is grounded at the circumference of the field (1 mm × 1 mm × 1 mm), the saturated potential distribution is obtained at the central 5 μm × 5 μm area in the field. The maximum potential attained is around 4.23 μV at the center of the bridge, if the accelerating voltage of the electron beam is 100 kV, the current density is 10 A/cm2, and the material of the mask is the intrinsic Si. The contribution of the charging may be negligible to the electron beam with such a high accelerating voltage, which is going through the opening beside the bridge pattern in the projection lithography.

Electron microprobe testing and evaluation procedures to determine the extent of within- and between-specimen heterogeneity of reference materials and the experimental uncertainty are described. These procedures have been developed and used at NIST in the certification of several NIST Standard Reference Materials (SRMs). In this article, they have been simplified and updated for general use. Suggestions for experimental testing of specimens are described and a detailed description of the statistical evaluation process is included with an example of a data spreadsheet and instructions for its preparation.

Kinematical and two-beam calculations have been conducted and are compared to experimental precession data for the large unit cell crystal La4Cu3MoO12. Precession electron diffraction intensities are found to exhibit approximate two-beam behavior and demonstrate clear advantages over conventional SADP intensities for use in structure solution.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

The Southeastern Microscopy Society (SEMS) welcomes you to Savannah, a historic old city that is truly in the heart of the south. The city is rich with history, both good and bad. One can find elegant antebellum mansions and restored homes as well as the site of the old slave market. Today's Savannah boasts lovely city squares with stately old trees draped with Spanish moss and fabulous restaurants. Savannah was recently voted one of the ten best cities to visit.

We have used in situ electron microscopy to observe the nucleation of Ge islands on lithographically patterned Si(001) mesas. Images were obtained at video rate during chemical vapor deposition of Ge, using a reflection electron microscopy geometry that allows nucleation to be observed over large areas. By comparing the kinetics of nucleation and coarsening on substrates modified by different annealing conditions, we find that the final island arrangement depends on the nature of the mesa sidewalls, and we suggest that this may be due to changes in diffusion of Ge across the nonplanar surface.

Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Following is a list of microscopy-related meetings and courses. The editors would greatly appreciate input to this list via the electronic submission form found in the MSA World-Wide Web page at http://www.msa.microscopy.com. We will gladly add hypertext links to the notice on the web and insert a listing of the meeting in the next issue of the Journal. Send comments and questions to JoAn Hudson, [email protected] or Nestor Zaluzec, [email protected].

Impurity atom cluster and nanocrystal formation in Er-implanted hexagonal SiC were studied using TEM and HAADF-STEM. Short interstitial loops were initially observed to form in the as-implanted layers. After annealing at 1600°C extended matrix defects (wide interstitial loops and voids), Er atom clusters and nanocrystals grew. The wide interstitial loops act as strong sinks capturing diffusing dopants that gather first in lines, then planes, and finally in three-dimensional ErSi2 nanocrystals. The unstrained nanocrystals have a hill-like shape and only two polarity-dependent orientations with respect to the matrix. One-, two-, and three-dimensional Er atom clusters were also identified. For the case of Ge implantation, again the wide interstitial loops act as sinks for the implanted Ge, representing the seeds of the nanocrystal.