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Tracking subsurface ion radiation damage with metal–oxide–semiconductor device encapsulation

Published online by Cambridge University Press:  05 January 2015

Dhruva D. Kulkarni ,
Radhey E. Shyam ,
Daniel B. Cutshall ,
Daniel A. Field ,
James E. Harriss ,
William R. Harrell  and
Chad E. Sosolik
Dhruva D. Kulkarni*
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, USA
Radhey E. Shyam
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, USA
Daniel B. Cutshall
Affiliation:
Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, USA
Daniel A. Field
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, USA
James E. Harriss
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, USA
William R. Harrell
Affiliation:
Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29634, USA
Chad E. Sosolik*
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, USA
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We describe measurements aimed at tracking the subsurface energy deposition of ionic radiation by encapsulating an irradiated oxide target within multiple, spatially separated metal–oxide–semiconductor (MOS) capacitors. In particular, we look at incident kinetic energy and potential energy effects in the low keV regime for alkali ions (Na+) and multicharged ions (MCIs) of ArQ+ (Q = 1, 4, 8, and 11) incident on the as-grown layers of SiO2 on Si. With the irradiated oxide encapsulated under Al top contacts, we record an electronic signature of the incident ionic radiation through capacitance–voltage (C–V) measurements. Both kinetic and potential energy depositions give rise to shifted C–V signatures that can be directly related to internal electron–hole pair excitations. The MCI data reveal an apparent power law dependence on charge state, which is at odds with some prior thin foil studies obtained at higher incident energies.

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Articles
Information
Journal of Materials Research , Volume 30 , Issue 9: Focus Issue: Characterization and Modeling of Radiation Damage on Materials: State of the Art, Challenges, and Protocols , 14 May 2015 , pp. 1413 - 1421
Copyright
Copyright © Materials Research Society 2014 

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Footnotes

Contributing Editor: Khalid Hattar

References

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