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Templated grain growth and piezoelectric properties of 〈001〉-textured PIN–PMN–PT ceramics

Published online by Cambridge University Press:  27 July 2015

Dan-dan Wei ,
Qi-bin Yuan ,
Gao-qun Zhang  and
Hong Wang
Dan-dan Wei
Affiliation:
Electronic Materials Research Laboratory & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China
Qi-bin Yuan
Affiliation:
Electronic Materials Research Laboratory & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China
Gao-qun Zhang
Affiliation:
Electronic Materials Research Laboratory & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China
Hong Wang*
Affiliation:
Electronic Materials Research Laboratory & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The 〈001〉-textured 36Pb(In1/2Nb1/2)O3–30Pb(Mg1/3Nb2/3)O3–34PbTiO3 (36PIN–30PMN–34PT) ceramics were successfully prepared by the templated grain growth method using BaTiO3 (BT) templates with an average edge length of 10 μm and a thickness of about 0.5 μm. The highest Lotgering factor of 95% has been achieved for the textured ceramics with 5 wt% BT templates sintered at 1240 °C. The Curie temperature (TC) and dielectric constant (εr) of the textured 36PIN–30PMN–34PT ceramics were 225 °C and 2850, respectively. The piezoelectric constant d33 of the textured samples was 780 pC/N and almost 2 times higher than that of random 36PIN–30PMN–34PT samples. The planar mode electromechanical coupling coefficient kp was 59% for the textured samples. Unipolar strain-field measurements for the textured ceramics exhibited 0.34% strain at 4 kV/mm.

Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 14 , 28 July 2015 , pp. 2144 - 2150
Copyright
Copyright © Materials Research Society 2015 

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References

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