Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-05T06:51:00.718Z Has data issue: false hasContentIssue false
  • English
  • Français

Sputtered amorphous carbon nitride films

Published online by Cambridge University Press:  03 March 2011

K.G. Kreider ,
M.J. Tarlov ,
G.J. Gillen ,
G.E. Poirier ,
L.H. Robins ,
L.K. Ives ,
W.D. Bowers ,
R.B. Marinenko  and
D.T. Smith
K.G. Kreider
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
M.J. Tarlov
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
G.J. Gillen
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
G.E. Poirier
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
L.H. Robins
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
L.K. Ives
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
W.D. Bowers
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
R.B. Marinenko
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
D.T. Smith
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899-0001
Get access

Abstract

The recent announcement of the synthesis of C3N4 has increased interest in this unique material. Carbon nitride may have several useful applications as wear and corrosion resistant coatings, electrical insulators, and optical coatings. We have produced amorphous carbon nitride coatings containing up to 40% nitrogen using planar magnetron RF sputtering with and without an ion beam in a nitrogen atmosphere. Both wavelength dispersive x-ray spectrometry (WDX) and x-ray photoelectron spectroscopy (XPS) indicate this composition. Coatings up to 2 μm thick were produced on alumina, silicon, SiO2, and glass substrates using a graphite target. Films with transparency greater than 95% in the visible wavelengths and harder than silicon have been produced. The properties of these films are correlated with composition, fabrication, conditions, and subsequent heat treatments. A scanning tunneling microscope (STM) and transmission electron microscopy (TEM) were used to characterize the morphology of the films. XPS studies confirm the stability of a carbon nitrogen phase up to 600 °C. Compositional variations were determined with secondary ion mass spectrometry (SIMS) depth profiling, and the Raman spectra are compared with those of carbon and carbon nitride films prepared by other methods.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 12 , December 1995 , pp. 3079 - 3083
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Liu, A. Y., and Cohen, M. L., Science 245, 841 (1989).CrossRefGoogle Scholar
2Haller, E. E., Cohen, M. L., and Hansen, W. L., Hard Carbon Nitride and Method for Preparing Same, May 5, 1992, U.S. Patent 5110679.Google Scholar
3Marton, D., Boyd, K. J., Al-Bayati, A. H., Todorov, S. S., and Rabalais, J. W., Phys. Rev. Lett. 73–1, 118 (1994).CrossRefGoogle Scholar
4Niu, C., Lu, Y. Z., and Leiber, C. M., Science 261, 334 (July 16, 1993).CrossRefGoogle Scholar
5Han, H. and Feldman, B. J., Solid State Commun. 65–9, 921 (1988).CrossRefGoogle Scholar
6Cuomo, J. J., Leary, P. A., Yu, D., Reuter, W., and Frisch, M., J. Vac. Sci. Technol. 16 (2), 299 (1979).CrossRefGoogle Scholar
7Torng, C. S., Sivertsen, J. M., Judy, J. H., and Chang, C., J. Mater. Res. 5, 2490 (1990).CrossRefGoogle Scholar
8Li, D., Chung, Y-W., Wong, M.S., and Sproul, W.D., J. Appl. Phys. 74, 219 (1993).CrossRefGoogle Scholar
9Chen, M.Y., Li, D., Lin, X., Dravid, V.P., Chung, Y-W., Wong, M-S., and Sproul, W.D., J. Vac. Sci Technol. A 11 (3), 521 (1993).CrossRefGoogle Scholar
10Poucher, J. L. and Poncher, R., Electron Probe Quantitation (Plenum Press, New York, 1991), pp. 31–75.CrossRefGoogle Scholar