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Origin of dislocation loops in α-silicon nitride

Published online by Cambridge University Press:  31 January 2011

Chong-Min Wang ,
Xiao-Qing Pan  and
Manfred Rühle
Chong-Min Wang
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, See Straβe 92, D-71074 Stuttgart, Germany
Xiao-Qing Pan
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, See Straβe 92, D-71074 Stuttgart, Germany
Manfred Rühle
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, See Straβe 92, D-71074 Stuttgart, Germany
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Abstract

Dislocation loops and stacking fault formation mechanism in α–Si3N4 have been studied by annealing α–Si3N4 powders at 1500 °C and 1750 °C. Thermally activated vacancies and the structural vacancies generated with replacement of nitrogen by oxygen have been tentatively suggested to be two sources of vacancies in α–Si3N4. From the point of view of mechanism, incorporation of these vacancies is believed to lie at the building-up stage of α–Si3N4 lattice. As a result of the vacancies agglomeration, dislocation loops and stacking faults seem to be a distinctively structural feature of α–Si3N4 fabricated by different routes [chemical vapor deposition (CVD), silicon nitridation, silica carbothermal reduction, and imide decomposition]. A general discussion has been extended to the historical controversy over the oxygen and vacancy stabilization of α–Si3N4 lattice arisen from the fact that the observed unit cell dimension of α–Si3N4 has a wide variation, and also to some related phenomena in processing of Si3N4.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 7 , July 1996 , pp. 1725 - 1732
Copyright
Copyright © Materials Research Society 1996

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References

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