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On the mechanism of secondary pop-out in cyclic nanoindentation of single-crystal silicon

Published online by Cambridge University Press:  12 May 2015

Hu Huang  and
Jiwang Yan
Hu Huang
Affiliation:
Department of Mechanical Engineering, Keio University, Yokohama 223-8522, Japan
Jiwang Yan*
Affiliation:
Department of Mechanical Engineering, Keio University, Yokohama 223-8522, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

In cyclic nanoindentation of single-crystal silicon, an interesting phenomenon of a secondary pop-out event that closely follows the first pop-out event but with a larger critical load than the first is presented. Cyclic nanoindentation experiments under various loading/unloading rates and various maximum indentation loads were performed to verify the generality of the phenomenon of two pop-out events. Raman spectroscopy results indicate that the secondary pop-out does not induce any new phase, and the dominated end phases after the two pop-out events are still a mixture of Si-XII/Si-III phases. According to average contact pressure analysis, the phase transformation paths and the formation mechanism for the secondary pop-out event are discussed from the viewpoint of crystal nucleation and growth. The results indicate that phase transformations from the Si-I phase to Si-XII/Si-III phases are completed by two pop-out events in two adjacent indentation cycles, and the Si-XII/Si-III phases formed in previous indentation cycles strongly affect the phase transformations in subsequent loading/unloading processes.

Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 11 , 14 June 2015 , pp. 1861 - 1868
Copyright
Copyright © Materials Research Society 2015 

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Footnotes

Contributing Editor: George M. Pharr

References

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