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The magnetization in (Zn1–xCox)Ga2O4 (x = 0.05, 0.10, and 0.20) diluted magnetic semiconductors depending on Co atoms in tetrahedral and octahedral sites

Published online by Cambridge University Press:  12 May 2014

Musa Mutlu Can
Musa Mutlu Can*
Affiliation:
Faculty of Engineering and Natural Sciences, Nanotechnology Research and Application Center, Sabancı University, Tuzla 34956, Istanbul, Turkey; and CNR-SPIN, Universitá di Napoli “Federico II”, Compl. Univ. di Monte S. Angelo, Via Cintia, Napoli I-80126, Italy
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The present study describes magnetic interactions in (Zn1–xCox)Ga2O4 (x = 0.05, 0.10, and 0.20) particles dependant on Co atoms in both tetrahedral and octahedral sites. The effects of substituted Co atoms to magnetic character are analyzed using Curie–Weiss law. The ferromagnetic character is found dominant in (Zn1–xCox)Ga2O4 semiconductors for x values lower than 0.10; in addition, a specific hysteresis with 139 ± 50 Oe coercivity is observed for 5% Co-doped ZnGa2O4. The high Co amount in tetrahedral site increased the number of antiferromagnetic couplings and the hysteresis at 300 K disappeared for (Zn0.80Co0.20)Ga2O4 particles. Furthermore, the Co+3 ions in the octahedral site decreased µeff values, per Co amounts, in the range of 4.89 ± 0.01 µB/Co to 4.44 ± 0.02 µB/Co, because of enhancing paramagnetic behaviors.

Keywords

wide band gap semiconductorszinc gallateoxide diluted magnetic semiconductors
Type
Articles
Information
Journal of Materials Research , Volume 29 , Issue 9 , 14 May 2014 , pp. 1062 - 1068
Copyright
Copyright © Materials Research Society 2014 

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