Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-24T09:50:42.562Z Has data issue: false hasContentIssue false
  • English
  • Français

INTRODUCTION

Published online by Cambridge University Press:  14 February 2014

Joshua A. Robinson ,
Mauricio Terrones ,
Joshua Golberger ,
John J. Boeckl  and
Chakrapani Varanasi
Joshua A. Robinson
Affiliation:
The Pennsylvania State University
Mauricio Terrones
Affiliation:
The Pennsylvania State University, and Shinshu University, Japan
Joshua Golberger
Affiliation:
The Ohio State University
John J. Boeckl
Affiliation:
Air Force Research Laboratory
Chakrapani Varanasi
Affiliation:
US Army Research Office
Get access

Abstract

An abstract is not available for this content so a preview has been provided. Please use the Get access link above for information on how to access this content.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Graphene and Beyond
Information
Journal of Materials Research , Volume 29 , Issue 3: Focus Issue: Graphene and Beyond , 14 February 2014 , pp. 297 - 298
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kroto, H.W., Heath, J.R., O’Brien, S.C., Curl, R.F., and Smalley, R.E.: C60: Buckminsterfullerene. Nature 318, 162–163 (1985).CrossRefGoogle Scholar
Iijima, S.: Helical microtubules of graphitic carbon. Nature 354, 56–58 (1991).Google Scholar
Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., and Dubonos, S.V.: Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).Google Scholar
Schwierz, F.: Graphene transistors. Nat. Nanotechnol. 5, 487–496 (2010).Google Scholar
Geim, A.K. and Novoselov, K.S.: The rise of graphene. Nat. Mater. 6, 183–191 (2007).Google Scholar
Cooper, D.R., D’Anjou, B., Ghattamaneni, N., Harack, B., Hilke, M., and Horth, A.: Experimental review of graphene. Condens. Matter Phys. 2012, 1–56 (2012).Google Scholar
Geim, A.K.: Graphene: Status and prospects. Science 324, 1530–1534 (2009).Google Scholar
Dreyer, D.R., Park, S., Bielawski, C.W., and Ruoff, R.S.: The chemistry of graphene oxide. Chem. Soc. Rev. 39, 228–240 (2010).CrossRefGoogle ScholarPubMed
Allen, M.J., Tung, V.C., and Kaner, R.B.: Honeycomb carbon: A review of graphene. Chem. Rev. 110, 132–145 (2010).Google Scholar
Avouris, P.: Graphene: Electronic and photonic properties and devices. Nano Lett. 10, 4285–4294 (2010).Google Scholar
Grigorenko, A.N., Polini, M., and Novoselov, K.S.: Graphene plasmonics. Nat. Photonics 6, 749–758 (2012).Google Scholar
Shao, Y., Wang, J., Wu, H., Liu, J., Aksay, I.A., and Lin, Y.: Graphene based electrochemical sensors and biosensors: A review. Electroanalysis 22, 1027–1036 (2010).CrossRefGoogle Scholar
Stankovich, S., Dikin, D.A., Dommett, G.H.B., Kohlhaas, K.M., Zimney, E.J., and Stach, E.A.: Graphene-based composite materials. Nature 442, 282–286 (2006).Google Scholar
Singh, V., Joung, D., Zhai, L., Das, S., Khondaker, S.I., and Seal, S.: Graphene based materials: Past, present and future. Prog. Mater. Sci. 56, 1178–1271 (2011).Google Scholar
Wang, Q.H., Kalantar-Zadeh, K., Kis, A., Coleman, J.N., and Strano, M.S.: Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).Google Scholar
Chhowalla, M., Shin, H.S., Eda, G., Li, L-J, Loh, K.P., and Zhang, H.: The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).CrossRefGoogle ScholarPubMed
Bresnehan, M.S., Hollander, M.J., Wetherington, M., LaBella, M., Trumbull, K.A., and Cavalero, R.: Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: Toward wafer-scale, high-performance devices. ACS Nano 6, 5234–5241 (2012).Google Scholar
Lee, G-H, Yu, Y-J, Cui, X., Petrone, N., Lee, C-H, and Choi, M.S.: Flexible and transparent MoS2 field-effect transistors on hexagonal boron titride-graphene heterostructures. ACS Nano 7, 7931–7936 (2013).Google Scholar
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., and Kis, A.: Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).Google Scholar
Gutiérrez, H.R., Perea-López, N., Elías, A.L., Berkdemir, A., Wang, B., and Lv, R.: Extraordinary room-temperature photoluminescence in triangular WS2 monolayers. Nano Lett. 13, 3447–3454 (2013).Google Scholar
Lalmi, B., Oughaddou, H., Enriquez, H., Kara, A., Vizzini, S., and Ealet, B.: Epitaxial growth of a silicene sheet. Appl. Phys. Lett. 97, 223109 (2010).Google Scholar