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Fluorine-doped tin oxide films with a high figure of merit fabricated by spray pyrolysis

Published online by Cambridge University Press:  21 May 2015

Oleksandr Malik*
Affiliation:
Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla 72000, Mexico
Francisco Javier De la Hidalga-Wade
Affiliation:
Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Puebla 72000, Mexico
Raquel Ramírez Amador
Affiliation:
Mechatronics Department, Universidad Tecnológica de Huejotzingo, Puebla 74169, Mexico
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Fluorine-doped tin oxide (FTO) thin films were deposited by spray pyrolysis in a pulse mode at 450 °C on glass substrates, using an alcoholic solution of SnCl4·5H2O and NH4F with different F/Sn ratios in the precursor solution. The film structure was nanocrystalline for all molar F/Sn ratios in the solution from 0 to 1.0. Postdeposition annealing treatments were not carried out. The films with a F/Sn = 0.35–1.0 ratio present a high grain orientation in the (200) crystallographic plane. A minimum sheet resistance of 4.5 Ω/sq, a resistivity of 2.2 × 10−4 Ω cm, a maximum electron mobility of 21.6 cm2/V s, and a carrier concentration of 1.7 × 1021 cm−3, corresponding to a strong degeneration of the electron gas in the conduction band, as well as a mean value of the transmittance of 0.84 in the visible spectral range, were obtained for the films fabricated with a F/Sn = 0.5 ratio. A high value of the figure of merit was obtained using two methods (38.8 × 10−3 Ω−1 and 5.75 Ω−1), that is, comparable with the highest values reported to date.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Jarzebski, Z.M.: Oxide Semiconductors (Science of Solid State Monographs) (Pergamon, New York, 1974).Google Scholar
Ginley, D., Hosono, H., and Paine, D.C. eds.: Handbook of Transparent Conductors (Springer, New York, 2011); p. 534.CrossRefGoogle Scholar
Cachet, H., Bruneaux, J., Folcher, G., Levy-Clement, C., Vard, C., and Neumann-Spallart, M.: n-Si/SnO2 junctions based on macroporous silicon for photoconversion. Sol. Energy Mater. Sol. Cells 46, 101 (1997).CrossRefGoogle Scholar
Haacke, G.: New figure of merit for transparent conductors. J. Appl. Phys. 47, 4086 (1976).CrossRefGoogle Scholar
Chen, Z., Li, W., Zhang, Y., Xu, G., and Cheng, H.: Fabrication of highly transparent and conductive indium-tin-oxide thin films with a high figure of merit via solution processing. Langmuir 29(45), 13836 (2013).CrossRefGoogle ScholarPubMed
Moholkar, A.V., Pawar, S.M., Rajpure, K.Y., and Bhosale, C.H.: Effect of solvent ratio on the properties of highly oriented sprayed fluorine-doped tin oxide thin films. Mater. Lett. 61, 3030 (2007).CrossRefGoogle Scholar
Gordon, R.G.: Criteria for choosing transparent conductors. MRS Bull. 25, 52 (2000).CrossRefGoogle Scholar
Noor, N. and Parkin, I.: Enhanced transparent-conducting fluorine-doped tin oxide films formed by aerosol-assisted chemical vapour deposition. J. Mater. Chem. C 1, 984 (2013).CrossRefGoogle Scholar
Rowell, M.W. and McGehee, M.D.: Transparent electrode requirements for thin film solar cell modules. Energy Environ. Sci. 4, 131 (2011).CrossRefGoogle Scholar
Martínez, A.I., Huerta, L., O-Rueda de León, J.M., Acosta, D., Malik, O., and Aguilar, M.: Physicochemical characteristics of fluorine doped tin oxide films. J. Phys. D: Appl. Phys. 39, 5091 (2006).CrossRefGoogle Scholar
Joint Committee on Power Diffraction Standards (JCPDS), International Centre for Diffraction Data, 1997, Card No. 41-1445.Google Scholar
Kim, K.H. and Chun, J.S.: X-ray studies of SnO2 prepared by chemical vapour deposition. Thin Solid Films 141, 287 (1986).CrossRefGoogle Scholar
Shanthi, E., Banerjee, A., and Chopra, K.L.: Dopant effects in sprayed tin oxide films. Thin Solid Films 88, 93 (1982).CrossRefGoogle Scholar
Malik, A., Sêco, A., Fortunato, E., Martins, R., Shabashkevich, B., and Piroszenko, S.: A new high ultraviolet sensitivity FTO-GaP Schottky photodiode fabricated by spray pyrolysis. Semicond. Sci. Technol. 13, 102 (1998).CrossRefGoogle Scholar