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Electrophysical and structural properties of the composite quantum wells In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As with ultrathin InAs inserts

Published online by Cambridge University Press:  08 September 2015

Galib Barievich Galiev ,
Ivan Sergeevich Vasil'evskii ,
Evgeniy Aleksandrovich Klimov ,
Sergey Sergeevich Pushkarev ,
Aleksey Nikolaevich Klochkov ,
Petr Pavlovich Maltsev ,
Mihail Yuryevich Presniakov ,
Igor Nikolaevich Trunkin  and
Aleksandr Leonidovich Vasiliev
Galib Barievich Galiev
Affiliation:
Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105 Moscow, Russia
Ivan Sergeevich Vasil'evskii
Affiliation:
Department of Condensed Matter Physics, National Nuclear Research University “MEPhI”, 115409 Moscow, Russia
Evgeniy Aleksandrovich Klimov
Affiliation:
Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105 Moscow, Russia
Sergey Sergeevich Pushkarev*
Affiliation:
Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105 Moscow, Russia
Aleksey Nikolaevich Klochkov
Affiliation:
Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105 Moscow, Russia
Petr Pavlovich Maltsev
Affiliation:
Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105 Moscow, Russia
Mihail Yuryevich Presniakov
Affiliation:
National Research Centre “Kurchatov Institute”, 123182 Moscow, Russia
Igor Nikolaevich Trunkin
Affiliation:
National Research Centre “Kurchatov Institute”, 123182 Moscow, Russia
Aleksandr Leonidovich Vasiliev
Affiliation:
National Research Centre “Kurchatov Institute”, 123182 Moscow, Russia; and A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, 119333 Moscow, Russia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The electrophysical and structural properties of InAlAs/InGaAs/InAlAs quantum wells (QWs) with thin InAs inserts were investigated by means of Hall effect measurements and scanning transmission electron microscopy. The analyzed heterostructures are nearly the same ones using for high electron mobility transistors manufacturing except for heavily doped contact top layer. The increase of the electron mobility and concentration in the heterostructures with thin InAs layers in the center of the InGaAs QW as compared with the uniform QW was found and this effect strongly depended on the technological conditions during growth of the InAs inserts. The dependence of the InAs insert structural quality and heterointerface width on the As4 beam equivalent pressure PAs was revealed. The decreased PAs is required for obtaining uniform and smooth InAs inserts as opposed to higher PAs resulting in the interface spreading and lateral composition inhomogeneity of the InAs insert.

Keywords

electronic materialmolecular beam epitaxyscanning transmission electron microscopy
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 20 , 28 October 2015 , pp. 3020 - 3025
Copyright
Copyright © Materials Research Society 2015 

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References

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