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Effects of Postdeposition in situ Heat Treatment on the Properties of Low Dielectric Constant Plasma Polymer Films Deposited Using Decahydronaphthalene and Tetraethyl Orthosilicate as the Precursors

Published online by Cambridge University Press:  31 January 2011

Jaeyoung Yang ,
Cheonman Shim  and
Donggeun Jung
Jaeyoung Yang
Affiliation:
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440–746, Republic of Korea
Cheonman Shim
Affiliation:
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440–746, Republic of Korea
Donggeun Jung*
Affiliation:
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University, Suwon 440–746, Republic of Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We investigated effects of postdeposition heat treatment (HT) on the properties of plasma polymer films deposited by plasma-enhanced chemical vapor deposition using a mixture of decahydronaphthalene and tetraethyl orthosilicate as the precursors, which were referred to as plasma-polymerized decahydronaphthalene:tetraethyl orthosilicate (PPDHN:TEOS) films. HTs at 350, 450, and 500 °C decreased the relative dielectric constant k of the PPDHN:TEOS films from 3.16, the k value of the as-deposited film, to 2.82, 2.72, and 3.02, respectively. The change of k value as a function of HT temperature was correlated with the change of Fourier transform infrared absorption peaks of O–H, C = O, and Si-related groups. As the HT temperature increased, the thermal stability of the PPDHN:TEOS film increased. PPDHN:TEOS films, as-deposited or heat treated, showed leakage current density in the order of 10−7 A/cm2 at 1 MV/cm.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 6 , June 2002 , pp. 1371 - 1375
Copyright
Copyright © Materials Research Society 2002

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References

1.Bohr, M., Tech. Dig. Int. Electron Devices Meet. 241 (1995).Google Scholar
2. H. Yasuda, Plasma Polymerization (Academic Press, Harcourt Brace Jovanovich Publishers, San Diego, CA, 1985).Google Scholar
3.Endo, K. and Tatsumi, T., Appl. Phys. Lett. 70, 2616 (1997).CrossRefGoogle Scholar
4.Senkevich, J.J. and Desu, S.B., Appl. Phys. Lett. 72, 258 (1998).CrossRefGoogle Scholar
5.Quan, Y.C., Joo, J., and Jung, D., Jpn. J. Apply. Phys. 38, 1356 (1999).CrossRefGoogle Scholar
6.Quan, Y.C., Joo, J., Yeo, S., and Jung, D., Jpn. J. Appl. Phys. 39, 1325 (2000).CrossRefGoogle Scholar
7.Jo, H., Quan, Y.C., and Jung, D., Thin Solid Films 384, 33 (2001).CrossRefGoogle Scholar
8.Aumaille, K., Valle´e, C., and Granier, A., Thin Solid Films 359, 188 (2000).CrossRefGoogle Scholar
9.Nicolazo, F., Goullet, A., Granier, A., Vallee, C., Turban, G., and Grolleau, B., Surf. Coat. Technol. 98, 1578 (1998).CrossRefGoogle Scholar
10.Grill, A. and Patel, V., Appl. Phys. Lett. 79, 803 (2001).CrossRefGoogle Scholar
11.Grill, A. and Patel, V., in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, edited by Ochrlein, G.S., Maex, K., Joo, Y-C., Ogawa, S., and Wetzel, J.T. (Mater. Res. Soc. Symp. Proc. 612, Warrendale, PA, 2000), p. D2.9.Google Scholar
12.Grill, A., From Tribological Coating to Low-k Dielectrics for ULSI Interconnects, IBM Research Report, (IBM, Armonk, NY, Feb. 20, 2001).Google Scholar
13.Yang, J., Shim, C., and Jung, D., Jpn. J. Appl. Phys. 39, L1324 (2000).CrossRefGoogle Scholar
14.Pavia, D.L., Lampman, G.M., and Kriz, G.S., Introduction to Spectroscopy (Harcourt Brace College Publishers, Orlando, FL, 1996).Google Scholar
15.Courtot-Descharles, A. and Pires, F., Microelectron. Reliab. 39, 279 (1999).CrossRefGoogle Scholar