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Direct observation of ordering in (GaIn) P

Published online by Cambridge University Press:  31 January 2011

S. McKernan ,
B. C. De Cooman ,
C. B. Carter ,
D. P. Bour  and
J. R. Shealy
S. McKernan
Affiliation:
Department of Materials Science and Engineering. Bard Hall. Cornell University, Ithaca, New York 14853
B. C. De Cooman
Affiliation:
Department of Materials Science and Engineering. Bard Hall. Cornell University, Ithaca, New York 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering. Bard Hall. Cornell University, Ithaca, New York 14853
D. P. Bour
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, New York 14853
J. R. Shealy
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, New York 14853
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Abstract

Gax In1 − x Pepilayers grown under a range of growth conditions by organometallic vapor phase epitaxy (OMVPE) on GaAs substrates have been studied in the electron microscope. The results show the presence of an ordering of the group III sublattice parallel to some of the {111} planes. Dark-field images directly reveal ordered domains of different orientations that appear not to be perfect, but contain many planar defects parallel to the growth surface.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 3 , Issue 3 , June 1988 , pp. 406 - 409
Copyright
Copyright © Materials Research Society 1988

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References

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