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Deposition and characterization of YBa2Cu3O7−δ thin films grown in situ by sequential ion beam sputtering

Published online by Cambridge University Press:  31 January 2011

J.A. Kittl ,
W.L. Johnson  and
C.W. Nieh
J.A. Kittl*
Affiliation:
W. M. Keck Laboratory of Engineering Materials, California Institute of Technology, Pasadena, California 91125
W.L. Johnson
Affiliation:
W. M. Keck Laboratory of Engineering Materials, California Institute of Technology, Pasadena, California 91125
C.W. Nieh
Affiliation:
Hughes Research Laboratory, Malibu, California 90265
*
a)Current address: Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138.
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Abstract

We investigated the in situ growth of YBa2Cu3O7−δ superconducting thin films by a sequential ion beam sputtering technique, studying the relations among deposition parameters, structural and superconducting properties. The films were deposited following the stacking sequence of YBa2Cu3O7−δ, with individual layer thicknesses nominally equal to one monolayer. O2 was supplied during deposition. Predominantly c-axis oriented films were grown on (100) SrTiO3, (100) MgO, and oxidized Si (SiO2/Si) substrates. The microstructure and film-substrate orientation relations were studied by transmission electron microscopy. X-ray studies showed the presence of homogeneous and inhomogeneous strains along the c-direction that persisted after low temperature oxygen anneals. Resistivity measurements showed correlations between the superconducting transition characteristics and the lattice distortions along the c-direction. The effect of deposition parameters on the lattice distortions was investigated, finding that the c-axis lattice parameter was larger in films grown at lower temperatures. This was interpreted in terms of the thermally activated dissociation of O2 at the film surface during growth. We assumed that the c-axis lattice expansion was due to kinetic limitations to the incorporation of oxygen into the film during growth. This led to a consistent description of the results obtained in this work and the O2 pressure dependence of the c-axis lattice expansion reported for other in situ techniques. Studies were performed on films grown by this technique as well as on films grown in situ by magnetron sputtering in an attempt to elucidate the nature of the defect structure causing the c-axis lattice distortions.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2003 - 2016
Copyright
Copyright © Materials Research Society 1992

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