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Co-mediated nucleation of erbium/silicon nanoclusters in fused silica

Published online by Cambridge University Press:  21 September 2015

Mert Celikin ,
David Barba ,
Andreas Ruediger ,
Martin Chicoine ,
Francois Schiettekatte  and
Federico Rosei
Mert Celikin*
Affiliation:
Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Varennes, QC J3X 1S2, Canada
David Barba
Affiliation:
Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Varennes, QC J3X 1S2, Canada
Andreas Ruediger
Affiliation:
Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Varennes, QC J3X 1S2, Canada
Martin Chicoine
Affiliation:
Regroupement Québécois sur les Matériaux de pointe, Département de Physique, Université de Montréal, Montréal, QC H3C 3J7, Canada
Francois Schiettekatte
Affiliation:
Regroupement Québécois sur les Matériaux de pointe, Département de Physique, Université de Montréal, Montréal, QC H3C 3J7, Canada
Federico Rosei*
Affiliation:
Centre Énergie Matériaux Télécommunications, Institut National de la Recherche Scientifique, Varennes, QC J3X 1S2, Canada; and Center for Self-Assembled Chemical Structures, McGill University, Montreal, QC, H3A 0B8, Canada
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)e-mail: [email protected]
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Abstract

We investigate the structural evolution of Er/Si nanoclusters obtained in co-implanted fused silica upon annealing via Raman spectroscopy and transmission electron microscopy. The effect of annealing temperature (900–1200 °C) on the nature and the relative fraction of the formed amorphous-Si, Si nanocrystals (Si-nc), and amorphous Er nanoparticles (Er-np) was determined in this ternary Er–Si–O system, showing a change of growth regime above 1100 °C due to the formation of mixed Er/O/Si aggregates. We observe that the nucleation and growth of amorphous Er-np and Si-nc are mutually affected. The 2-fold increase in the size of Er-np when no excess Si+ is present in the matrix indicates that the formation of Si-nc in the proximity of Er clusters hinders Er diffusivity above 1100 °C. This finding shows the importance of nanoclustering for improving the thermal stability of Er-doped silica systems.

Keywords

erbiumion-implantationRaman spectroscopytransmission electron microscopysilicon nanocrystalsphotoluminescence
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 20 , 28 October 2015 , pp. 3003 - 3010
Copyright
Copyright © Materials Research Society 2015 

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References

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