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A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers

Published online by Cambridge University Press:  05 February 2015

Francesca Iacopi Open the ORCID record for Francesca Iacopi [Opens in a new window] ,
Neeraj Mishra ,
Benjamin Vaughan Cunning ,
Dayle Goding ,
Sima Dimitrijev ,
Ryan Brock ,
Reinhold H. Dauskardt ,
Barry Wood  and
John Boeckl
Francesca Iacopi*
Affiliation:
Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
Neeraj Mishra
Affiliation:
Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
Benjamin Vaughan Cunning
Affiliation:
Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
Dayle Goding
Affiliation:
Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
Sima Dimitrijev
Affiliation:
Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia
Ryan Brock
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Reinhold H. Dauskardt
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Barry Wood
Affiliation:
Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072, Australia
John Boeckl
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson AFB, Ohio 45433, USA
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We introduce a novel approach to the synthesis of high-quality and highly uniform few-layer graphene on silicon wafers, based on solid source growth from epitaxial 3C-SiC films. Using a Ni/Cu catalytic alloy, we obtain a transfer-free bilayer graphene directly on Si(100) wafers, at temperatures potentially compatible with conventional semiconductor processing. The graphene covers uniformly a 2″ silicon wafer, with a Raman ID/IG band ratio as low as 0.5, indicative of a low defectivity material. The sheet resistance of the graphene is as low as 25 Ω/square, and its adhesion energy to the underlying substrate is substantially higher than transferred graphene. This work opens the avenue for the true wafer-level fabrication of microdevices comprising graphene functional layers. Specifically, we suggest that exceptional conduction qualifies this graphene as a metal replacement for MEMS and advanced on-chip interconnects with ultimate scalability.

Type
Invited Feature Papers
Information
Journal of Materials Research , Volume 30 , Issue 5 , 14 March 2015 , pp. 609 - 616
Copyright
Copyright © Materials Research Society 2015 

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References

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