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Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

Published online by Cambridge University Press:  27 August 2014

Shanmugam Parthiban  and
Jang-Yeon Kwon
Shanmugam Parthiban
Affiliation:
School of Integrated Technology, and Yonsei Institute of Convergence Technology, Yonsei University, Yeonsu-gu, Incheon 406-840, Korea
Jang-Yeon Kwon*
Affiliation:
School of Integrated Technology, and Yonsei Institute of Convergence Technology, Yonsei University, Yeonsu-gu, Incheon 406-840, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

In this review, we discuss the recent developments of high-performance and improved-stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin-film transistors (TFTs) properties. TAOSs are widely explored with the aim of producing high-performance semiconductors suitable for the channel layer of TFTs which enable to survive under light and thermal-bias-induced stress conditions. Numerous TAOSs have been invented with some improved performance characteristics of TFTs such as mobility, light and thermal induced bias stress. However, there has been no clear elucidation of the mechanisms driving these improvements. In this review, we discuss the progression of innovations of high performance indium-oxide-based TAOS TFTs from its first reported amorphous indium gallium zinc oxide (a-IGZO) to present, and their properties that are correlated with the Lewis acid strength (L) and bonding strength of dopant and oxygen as a carrier suppressor and strong binder. The proposed mechanism can be practical to develop novel TAOS TFTs with high mobility and stability.

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Reviews
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Journal of Materials Research , Volume 29 , Issue 15 , 14 August 2014 , pp. 1585 - 1596
Copyright
Copyright © Materials Research Society 2014 

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