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Processing of multilayer microcrystalline and nanocrystalline diamond thin films using Ar-rich microwave plasmas

Published online by Cambridge University Press:  01 December 2011

Nirmal Govindaraju ,
Chaitanya Kane  and
Raj N. Singh
Nirmal Govindaraju
Affiliation:
Energy and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012
Chaitanya Kane
Affiliation:
Energy and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012
Raj N. Singh*
Affiliation:
Energy and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

This article lays the foundation for the development of microwave plasma chemical vapor deposition process conditions for synthesizing multilayered microcrystalline and nanocrystalline diamond (MCD and NCD) thin films. The effects of gas composition and the diamond seeding medium are correlated with the film morphology and diamond phase purity. Results of process optimization experiments using single-layer diamond deposition indicate that for high gas-phase Ar content (≥90%) the film quality improves with reduced Ar content and with increasing thickness reaching a plateau above a thickness of ∼2 μm. Multilayer diamond deposition experiments with two different seeding media (25 nm and 1 μm) clearly show that it is feasible to selectively synthesize alternating MCD (60% Ar) and NCD (95% Ar) layers with good control of film quality and morphology, thereby setting the stage for development of multilayered diamond thin films with tailored properties for thermal management applications.

Keywords

Thin filmDiamondPlasma-enhanced CVD
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 24 , 28 December 2011 , pp. 3072 - 3082
Copyright
Copyright © Materials Research Society 2011

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