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Optical properties of Si nanowires: Dependence on substrate crystallographic orientation and light polarization

Published online by Cambridge University Press:  13 March 2015

Juan A. Badán ,
Ricardo E. Marotti ,
Enrique A. Dalchiele ,
Daniel Ariosa ,
Francisco Martín ,
Dietmar Leinen ,
Efrain Ochoa  and
José R. Ramos-Barrado
Juan A. Badán*
Affiliation:
Instituto de Física & CINQUIFIMA, Facultad de Ingeniería, Universidad de la República, CP 11000, Montevideo, Uruguay
Ricardo E. Marotti
Affiliation:
Instituto de Física & CINQUIFIMA, Facultad de Ingeniería, Universidad de la República, CP 11000, Montevideo, Uruguay
Enrique A. Dalchiele
Affiliation:
Instituto de Física & CINQUIFIMA, Facultad de Ingeniería, Universidad de la República, CP 11000, Montevideo, Uruguay
Daniel Ariosa
Affiliation:
Instituto de Física & CINQUIFIMA, Facultad de Ingeniería, Universidad de la República, CP 11000, Montevideo, Uruguay
Francisco Martín
Affiliation:
Lab. de Materiales y Superficies (Unidad Asociada al CSIC), Dptos. de Física Aplicada & Ingeniería Química, Universidad de Málaga, E29071 Málaga, Spain
Dietmar Leinen
Affiliation:
Lab. de Materiales y Superficies (Unidad Asociada al CSIC), Dptos. de Física Aplicada & Ingeniería Química, Universidad de Málaga, E29071 Málaga, Spain
Efrain Ochoa
Affiliation:
Lab. de Materiales y Superficies (Unidad Asociada al CSIC), Dptos. de Física Aplicada & Ingeniería Química, Universidad de Málaga, E29071 Málaga, Spain
José R. Ramos-Barrado
Affiliation:
Lab. de Materiales y Superficies (Unidad Asociada al CSIC), Dptos. de Física Aplicada & Ingeniería Química, Universidad de Málaga, E29071 Málaga, Spain
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Optical properties of Si nanowire (SiNW) arrays prepared on p-doped Si(111) and Si(100) substrates were studied. SiNWs were synthesized by self-assembly electroless metal deposition nanoelectrochemistry in an ionic silver HF solution through selective etching. Total reflectance (Rt) and total diffuse reflectance (Rdt) of SiNWs change drastically in comparison to polished Si. To understand these changes, diffuse reflectance (Rd) with polarized incident light was studied. For samples prepared on Si(111), the wave length integrated Rd (wIRd) shows maxima at certain angles of incidence θ, regardless of the incident light polarization. For samples prepared on Si(100), wIRd increases with θ and depends on incident light polarization. Also, Rd spectra show structures due to interference effects. Therefore, SiNWs prepared on Si(100) can be considered as thin films whose refractive index depends on light polarization. Moreover, Rdt of SiNWs prepared on Si(111) can be modeled as an ensemble of diffuse reflectors.

Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 6 , 28 March 2015 , pp. 753 - 760
Copyright
Copyright © Materials Research Society 2015 

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References

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