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Microporous SiO2/Vycor membranes for gas separation

Published online by Cambridge University Press:  31 January 2011

R. A. Levy ,
E. S. Ramos ,
L. N. Krasnoperov ,
A. Datta  and
J. M. Grow
R. A. Levy
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
E. S. Ramos
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
L. N. Krasnoperov
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
A. Datta
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
J. M. Grow
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102
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Abstract

In this study, porous Vycor tubes with 40 Å initial pore diameter were modified using low pressure chemical vapor deposition (LPCVD) of SiO2. Diethylsilane (DES) in conjunction with O2 or N2O were used as precursors to synthesize the SiO2 films. Both “single side” (reactants flowing on the same side of porous membrane) and “counterflow” (reactants flowing on both sides of porous membrane) reactant geometries have been investigated. The flow of H2, He, N2, Ar, and toluene (C7H8) was monitored in situ after each deposition period. Membranes modified by the “single side” reactants geometry exhibited good selectivities between small and large molecules. However, cracking in these membranes after prolonged deposition limited the maximum achievable selectivity values. Higher selectivities and better mechanical stability were achieved with membranes produced using the “counterflow” reactants geometry. Pore narrowing rate was observed to increase with oxidant flow (O2 or N2O). For membranes prepared using both oxidants, selectivities on the order of 1000: 1 were readily attained for H2 and He over N2, Ar, and C7H8. As compared to O2, the use of N2O caused improvements in both the pore narrowing rate and N2: C7H8 selectivity. Membranes prepared using the “counterflow” geometry showed no signs of degradation or cracking after thermal cycling.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 12 , December 1996 , pp. 3164 - 3173
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1.Chiu, C., Hydrocarbon Processing 69, 69 (1990).Google Scholar
2.Spillman, R., Chem. Eng. Prog. 85, 41 (1989).Google Scholar
3.Renko, R., Pollut. Eng. 26, 62 (1994).Google Scholar
4.Fagliano, G., Berry, M., Bove, F., and Burke, T., Public Works 122, 96 (1991).Google Scholar
5.Spillman, R. and Sherwin, M., Chem. Tech. 20, 378 (1990).Google Scholar
6.Way, J. D. and Roberts, D. L., Sep. Sci. Tech. 27, 29 (1992).Google Scholar
7.Volf, M.V., Technical Glasses (Sir Isaac Pitman / Sons, Ltd., London, 1961), p. 178.Google Scholar
8.Hsieh, H. P., AIChE Symp. Ser. 84, 1 (1988).Google Scholar
9.Chan, K. K. and Brownstein, A.M., Ceram. Bull. 70, 703 (1991).Google Scholar
10.Sheppard, L. M., Ceram. Bull. 70, 1145 (1991).Google Scholar
11.Hwang, S. and Kammermeyer, K., Techniques of Chemistry (John Wiley and Sons, Inc., New York, 1975), Vol. 7, p. 57.Google Scholar
12.Shaefer, D. W., MRS Bull. 19, 14 (1994).Google Scholar
13.Cunningham, R. E. and Williams, R.J.J., Diffusion in Gases and Porous Solids (Plenum Press, New York, 1980), p. 12.Google Scholar
14.Ulhorn, R. A. and Burggraaf, A.J., in Inorganic Membranes, edited by Bhave, R. (Chapman and Hall, New York, 1991), p. 167.Google Scholar
15.Shelekhin, A. B., Dixon, A.G., and Ma, Y.H., AIChE J. 41, 58 (1995).Google Scholar
16.Sherman, A., Chemical Vapor Deposition for Microelectronics: Principles, Technology and Applications (Noyes Publications, Park Ridge, NJ, 1987), p. 1.Google Scholar
17.Kern, W., in Microelectronic Materials and Processes, edited by Levy, R. A. (Kluwer Academic Publishers, Dordrecht, 1989), p. 203.Google Scholar
18.Hsieh, H. P., Catal. Rev.-Sci. Eng. 33, 1 (1991).Google Scholar
19.Gelernt, B., Semicond. Int. 13, 82 (1990).Google Scholar
20.Hochberg, A. K. and O'Meara, D. L., J. Electrochem. Soc. 136, 1843 (1989).CrossRefGoogle Scholar
21.Chakravarthy, G. S., Levy, R. A., Grow, J. M., and Attia, W. M., in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, edited by Helms, C. R. and Deal, B.E. (Plenum Press, New York, 1993), p. 165.CrossRefGoogle Scholar
22.Gavalas, G. R., Megiris, C. E., and Nam, S. W., Chem. Eng. Sci. 44, 1829 (1989).Google Scholar
23.Nam, S. W. and Gavalas, G.R., AIChE Symp. Ser. 268, 68 (1989).Google Scholar
24.Tsapatsis, M., Kim, S., Nam, S. W., and Gavalas, G. R., Ind. Eng. Chem. Res. 30, 2152 (1991).Google Scholar
25.Tsapatsis, M. and Gavalas, G. R., AIChE J. 38, 847 (1992).Google Scholar
26.Megiris, C. E. and Glezer, J. H. E., Ind. Eng. Chem. Res. 31, 1293 (1991).CrossRefGoogle Scholar
27.Levy, R. A., Grow, J. M., and Chakravarthy, G. S., Chem. Mater. 5, 1710 (1993).Google Scholar
28.Feng, X., Sourirajan, S., Handan Tezel, F., Matsuura, T., and Farnand, B. A., Ind. Eng. Chem. Res. 32, 533 (1993).CrossRefGoogle Scholar
29.Lin, Y. S., J. Membrane Sci. 79, 55 (1993).CrossRefGoogle Scholar
30.Pohl, P. I. and Smith, D. M., in Advances in Porous Materials, edited by Komarneni, S., Smith, D. M., and Beck, J. S. (Mater. Res. Soc. Symp. Proc. 371, Pittsburgh, PA, 1995), p. 27.Google Scholar
31.Rao, M. B. and Sircar, S., Gas Separation / Purification 7, 279 (1993).CrossRefGoogle Scholar
32.Rao, M. B. and Sircar, S., J. Membrane Sci. 85, 253 (1993).Google Scholar