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Mechanism of vertical Ge nanowire nucleation on Si (111) during subeutectic annealing and growth

Published online by Cambridge University Press:  03 October 2011

Se Jun Park ,
Sung Hwan Chung ,
Bong-Joong Kim ,
Minghao Qi ,
Xianfan Xu ,
Eric A. Stach  and
Chen Yang
Se Jun Park
Affiliation:
Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; and School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907
Sung Hwan Chung
Affiliation:
Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907
Bong-Joong Kim
Affiliation:
Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; and School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907
Minghao Qi
Affiliation:
Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907
Xianfan Xu
Affiliation:
Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; and School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907
Eric A. Stach
Affiliation:
Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; and School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907
Chen Yang*
Affiliation:
Department of Chemistry, Purdue University, West Lafayette, Indiana 47907; and Department of Physics, Purdue University, West Lafayette, Indiana 47907
*
c)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The direct integration of Ge nanowires with silicon is of interest in multiple applications. In this work, we describe the growth of high-quality, vertically oriented Ge nanowires on Si (111) substrates utilizing a completely sub-Au–Si-eutectic annealing and growth procedure. With all other conditions remaining identical, annealing below the Au–Si eutectic results in successful heteroepitaxial nucleation and growth of Ge nanowires on Si substrate while annealing above the Au–Si eutectic leads to randomly oriented growth. A model is presented to elucidate the effect of the annealing temperature, in which we hypothesized that sub-Au–Si-eutectic annealing leads to the formation of a single and well-oriented interface, essential to template heteroepitaxial nucleation. These results are critically dependent on substrate preparation and lead to the creation of integrated nanowire systems with a low thermal budget process.

Keywords

NanostructureGeSi
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 21 , 14 November 2011 , pp. 2744 - 2748
Copyright
Copyright © Materials Research Society 2011

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References

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Supplementary material: PDF

Park Supplementary Figure

Figure S1: SEM images of Ge nanowires grown on the SiO2 surface, with annealing at 320 °C (a) and 400 °C (b). SEM images were taken with a 25° inclination from the plan-view (in a, b and c) and in cross-sectional view (insets to a, b and c). All scale bars are 1 μm.

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