Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-12-01T03:32:14.277Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of selenium vapor postannealing on the electrical transport properties of PbSe–WSe2 nanolaminates

Published online by Cambridge University Press:  27 April 2011

Qiyin Lin ,
Sara Tepfer ,
Colby Heideman ,
Clay Mortensen ,
Ngoc Nguyen ,
Paul Zschack ,
Matt Beekman  and
David C. Johnson
Qiyin Lin
Affiliation:
Department of Chemistry, University of Oregon, Eugene, Oregon, 97403-1205
Sara Tepfer
Affiliation:
Department of Chemistry, University of Oregon, Eugene, Oregon, 97403-1205
Colby Heideman
Affiliation:
Department of Chemistry, University of Oregon, Eugene, Oregon, 97403-1205
Clay Mortensen
Affiliation:
Department of Chemistry, University of Oregon, Eugene, Oregon, 97403-1205
Ngoc Nguyen
Affiliation:
Department of Chemistry, University of Oregon, Eugene, Oregon, 97403-1205
Paul Zschack
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois, 60439
Matt Beekman
Affiliation:
Department of Chemistry, University of Oregon, Eugene, Oregon, 97403-1205
David C. Johnson*
Affiliation:
Department of Chemistry, University of Oregon, Eugene, Oregon, 97403-1205
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

The influence of annealing time and annealing temperature under controlled partial pressure of selenium on the in-plane electrical transport properties of specimens of [(PbSe)0.99]1[WSe2]1 turbostratic nanolaminates was studied. The annealing treatments were found to be very effective in reducing carrier concentrations and improving carrier mobility in the annealed films, which is attributed to the reduction of compositional and structural defects. As a result, room temperature Hall mobilities greater than 60 cm2 V−1·s−1 are observed in spite of the small in-plane domain sizes (on the order of 10 nm) that are related to the turbostratic disorder. The technique appears promising for decreasing the concentration of kinetically trapped defects in these and related self-assembled nanostructures, a key challenge to evaluating the expected potential for controlling electrical and thermal transport properties via designed nanostructure in these and related materials.

Keywords

ThermoelectricAnnealingElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 15: Focus Issue: Advances in Thermoelectric Materials , 14 August 2011 , pp. 1866 - 1871
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Heideman, C., Nyugen, N., Hanni, J., Lin, Q., Duncombe, S., Johnson, D.C., and Zschack, P.: The synthesis and characterization of new [(BiSe)1.10]m[NbSe2]n, [(PbSe)1.10]m[NbSe2]n, [(CeSe)1.14]m [NbSe2]n and [(PbSe)1.12]m[TaSe2]n misfit layered compounds. J. Solid State Chem. 181, 1701 (2008).CrossRefGoogle Scholar
2.Lin, Q., Heideman, C.L., Nguyen, N., Zschack, P., Chiritescu, C., Cahill, D.G., and Johnson, D.C.: Designed synthesis of families of misfit-layered compounds. Eur. J. Inorg. Chem. 2008, 2382 (2008).CrossRefGoogle Scholar
3.Lin, Q., Smeller, M., Heideman, C.L., Zschack, P., Koyano, M., Anderson, M.D., Kykyneshi, R., Keszler, D.A., Anderson, I.M., and Johnson, D.C.: Rational synthesis and characterization of a new family of low thermal conductivity misfit layer compounds [(PbSe)0.99]m(WSe2)n. Chem. Mater. 22, 1002 (2010).CrossRefGoogle Scholar
4.Wiegers, G.A.: Misfit layered compounds: Structures and physical properties. Prog. Solid State Chem. 24, 1 (1996).CrossRefGoogle Scholar
5.Noh, M., Johnson, C.D., Hornbostel, M.D., Thiel, J., and Johnson, D.C.: Control of reaction pathway and the nanostructure of final products through the design of modulated elemental reactants. Chem. Mater. 8, 1625 (1996).CrossRefGoogle Scholar
6.Chiritescu, C., Cahill, D.G., Heideman, C., Lin, Q., Mortensen, C., Nguyen, N.T., Johnson, D.C., Rostek, R., and Böttner, H.: Low thermal conductivity in nanoscale layered materials synthesized by the method of modulated elemental reactants. J. Appl. Phys. 104, 033533 (2008).CrossRefGoogle Scholar
7.Mavrokefalos, A., Lin, Q., Beekman, M., Seol, J.H., Lee, Y.J., Kong, H., Pettes, M.T., Johnson, D.C., and Shi, L.: In-plane thermal and thermoelectric properties of misfit-layered [(PbSe)0.99]x [WSe2]x superlattice thin films. Appl. Phys. Lett. 96, 181908 (2010).CrossRefGoogle Scholar
8.Chiritescu, C., Cahill, D.G., Nguyen, N., Johnson, D., Bodapati, A., Keblinski, P., and Zschack, P.: Ultralow thermal conductivity in disordered, layered WSe2 crystals. Science 135, 351 (2007).CrossRefGoogle Scholar
9.Smalley, A.L.E., Kim, S., and Johnson, D.C.: Effects of composition and annealing on the electrical properties of CoSb3. Chem. Mater. 15, 3847 (2003).CrossRefGoogle Scholar
10.Nishizawa, J.-I., Okuno, Y., Suto, K., Sato, T., and Yamokoshi, S.: Heat treatment of gallium phosphide. Solid State Commun. 14, 889 (1974).CrossRefGoogle Scholar
11.Fleurial, J.P., Gailliard, L., Triboulet, R., Scherrer, H., and Scherrer, S.: thermal properties of high quality single crystals of bismuth telluride-part I: Experimental characterization. J. Phys. Chem. Solids 49, 1237 (1988).CrossRefGoogle Scholar
12.Sugiyama, K.: Heat treatment of PbxSn1-xTe solid solutions. Jpn. J. Appl. Phys. 8, 976 (1969).CrossRefGoogle Scholar
13.Zhang, L. and Singh, D.J.: Electronic structure and thermoelectric properties of layered PbSe-WSe2 materials. Phys. Rev. B 80, 075117 (2009).CrossRefGoogle Scholar
14.Pietsch, U., Holý, V., and Baumbach, T.: High Resolution X-ray Scattering, 2nd ed. (Springer-Velag, New York, 2004).CrossRefGoogle Scholar
15.Zschack, P., Heideman, C., Mortensen, C., Nguyen, N., Smeller, M., Lin, Q., and Johnson, D.C.: X-ray characterization of low thermal conductivity thin film materials. J. Electron. Mater. 38, 1402 (2009).CrossRefGoogle Scholar
16.Wainfan, N. and Parratt, L.G.: X-ray reflection studies of anneal and oxidation of some thin solid films. J. Appl. Phys. 31, 1331 (1960).CrossRefGoogle Scholar
17.Qiu, X., Zhao, Y., Steward, I.M., Dyck, J.S., and Burda, C.: Improvement of the thermoelectric power factor through anisotropic growth of nanostructured PbSe thin films. Dalton Trans. 39, 1095 (2010).CrossRefGoogle ScholarPubMed