Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-12-01T00:00:56.298Z Has data issue: false hasContentIssue false

Electrical properties of highly oriented Pb(Mg1/3Nb2/3)O3–Pb(Zr,Ti)O3 thin films fabricated by the sol-gel method

Published online by Cambridge University Press:  01 June 2006

Joon-Koo Kang
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Chee-Sung Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jae-Wung Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Gun-Tae Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Hyoun-Ee Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jong-Jin Choi
Affiliation:
Department of Future Technology, Korea Institute of Machinery and Materials, Chang-Won, Gyeong-Nam 641-831, Korea
*
a) Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Highly (100)- and (111)-oriented lead magnesium niobate–lead zirconate titanate (PMN-PZT) films were deposited on Pt(111)/Ti/SiO2/Si substrates using a sol containing polyvinylpyrrolidone (PVP). The molar ratio of Zr/Ti in the PZT was fixed at 60/40, and the PMN content was changed in the range of 0–30 mol%. The films had a dense and columnar microstructure with a thickness of about 1 μm as a result of being spun four times. The crystallographic orientation of the films was controlled by adjusting the pyrolysis temperature; a (100) orientation was obtained by pyrolyzing at 300 °C and a (111) orientation by pyrolyzing at 350 °C. The electrical properties of the films were strongly dependent on the crystallographic orientation and PMN content. With increasing PMN content, the dielectric constant of all of the films increased. On the other hand, the remnant polarization of the (111)-oriented films decreased steadily with increasing PMN content, while that of the (100)-oriented films remained unchanged up to a PMN content of 20%. The piezoelectric coefficients of the (100)-oriented film were consistently higher than those of the (111)-oriented film with the same composition. The highest piezoelectric coefficient was observed for the (100)-oriented film with a composition of 0.2PMN–0.8PZT, indicating the morphotropic phase boundary between the rhombohedral PZT phase and the pseudocubic PMN phase is in the vicinity of this composition.

Type
Articles
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Jaffe, B., Cook, W.R. Jr., Jaffe, H.: Piezoelectric Ceramics (Academic Press, London, UK, 1971), p. 135.Google Scholar
2.Evans, J.T., Womack, R.: An experimental 512-bit nonvolatile memory with ferroelectric storage cell. IEEE J. Solid-State Circuits 23, 1171 (1988).CrossRefGoogle Scholar
3.Fujii, T., Watanabe, S., Suzuki, M., Fujiu, T.: Application of lead zirconate titanate thin film displacement sensors for the atomic force microscope. J. Vac. Sci. Technol. B 13, 1119 (1995).CrossRefGoogle Scholar
4.Sreenivas, K., Sayer, M., Baar, D.J., Nishioka, M.: Surface acoustic wave propagation on lead zirconate titanate thin films. Appl. Phys. Lett. 52, 709 (1988).CrossRefGoogle Scholar
5.Ishida, M., Matsunami, H., Tanaka, T.: Electro-optic effects of PLZT thin films. Appl. Phys. Lett. 31, 433 (1977).CrossRefGoogle Scholar
6.Mckinstry, S.T., Muralt, P.: Thin film piezoelectrics for MEMS. J. Electroceram. 12, 7 (2004).CrossRefGoogle Scholar
7.Vikhnin, V.S., Blinc, R., Pirc, R.: Mechanisms of electrostriction and giant piezoelectric effect in relaxor ferroelectrics. J. Appl. Phys. 93, 9947 (2003).CrossRefGoogle Scholar
8.Ouchi, H., Nagase, K., Hayakawa, S.: Piezoelectric properties of PMN-PT-PZ solid solution. J. Am. Ceram. Soc. 48, 630 (1965).CrossRefGoogle Scholar
9.Shaw, J.C., Liu, K.S., Lin, I.N.: Modification of piezoelectric characteristics of the PMN-PZ-PT ternary system by aliovalent additive. J. Am. Ceram. Soc. 78, 178 (1995).CrossRefGoogle Scholar
10.Shyu, M.J., Hong, T.J., Wu, T.B.: Properties of highly (100) oriented thin films of sol-gel derived PMN-PT on (100) textured LaNiO3 electrode. Mater. Lett. 23, 221 (1995).CrossRefGoogle Scholar
11.Yoon, K.H., Lee, B.D., Park, J., Park, J.H.: Dielectric and piezoelectric properties of (x)PMN-(1-x)PZT thin films prepared by the sol-gel method. J. Appl. Phys. 90, 1968 (2001).CrossRefGoogle Scholar
12.Park, J.H., Yoon, K.H., Kang, D.H., Park, J.: Effect of PMN addition on dielectric properties of PZT thin films synthesized by modified chemical solution process. Mater. Chem. Phys. 79, 151 (2003).CrossRefGoogle Scholar
13.Sumi, K., Qiu, H., Kamei, H., Moriya, S., Murai, M., Shimada, M., Nishiwaki, T., Takei, K., Hashimoto, M.: Structural, compositional and piezoelectric properties if the sol-gel Pb(Zr0.56Ti0.44)0.8(Mg1/3Nb2/3)0.2O3/ Pb(Zr0.56Ti0.44)O3 composite films. Thin Solid Films 349, 270 (1999).CrossRefGoogle Scholar
14.Du, X., Zheng, J., Belegundu, U., Uchino, K.: Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary. Appl. Phys. Lett. 72, 2421 (1998).CrossRefGoogle Scholar
15.Park, G.T., Park, C.S., Choi, J.J., Kim, H.E.: Orientation control of sol-gel derived lead zirconate titanate film by addition of polyvinylpyrrolidone. J. Mater. Res. 20, 882 (2005).CrossRefGoogle Scholar
16.Tayler, D., Damjanovic, D.: Piezoelectric properties of rhombohedral Pb(Zr,Ti)O3 thin films with (100), (111), and “random” crystallographic orientation. Appl. Phys. Lett. 76, 1615 (2000).CrossRefGoogle Scholar
17.Du, X., Belegundu, U., Uchino, K.: Crystal orientation dependence of piezoelectric properties in lead zirconate titanate: Theoretical expectation for thin films. Jpn. J. Appl. Phys. 36, 5580 (1997).CrossRefGoogle Scholar
18.Brooks, K.G., Reaney, I.M., Klissurska, R., Huang, Y., Bursill, L., Setter, N.: Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates. J. Mater. Res. 9, 2540 (1994).CrossRefGoogle Scholar
19.Park, G., Choi, J., Ryu, J., Fan, H., Kim, H.: Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method. Appl. Phys. Lett. 80, 4606 (2002).CrossRefGoogle Scholar