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Annealing-induced lattice recovery in room-temperature xenon irradiated CeO2: X-ray diffraction and electron energy loss spectroscopy experiments

Published online by Cambridge University Press:  10 February 2015

Janne Pakarinen*
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA; and Belgian Nuclear Research Center (SCK-CEN), Boeretang 200, B-2400 Mol, Belgium
Lingfeng He
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Abdel-Rahman Hassan
Affiliation:
Department of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA
Yongqiang Wang
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Mahima Gupta
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Anter El-Azab
Affiliation:
Department of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA
Todd R. Allen
Affiliation:
Department of Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A systematic x-ray diffraction (XRD) study was performed on room-temperature Xe-irradiated and postirradiation annealed CeO2. Large scale XRD did not show any additional irradiation-induced phases upon irradiation. Depth profiling the CeO2 (111) diffraction peak over the 150 nm deep Xe-irradiated layer (400 keV, 1 × 1020 Xe/m2) by grazing incidence XRD indicated a lattice expansion at the irradiated layer. Postirradiation annealing (1 h at 1000 °C) in an oxygen-containing environment removed the observed XRD features. Electron energy loss spectroscopy (EELS) was performed for cross-sectional samples before and after postirradiation annealing. EELS showed that the Ce charge state changed from +4 to +3 at the CeO2 surface indicating the presence of O vacancies in both as-irradiated and annealed samples. EELS also indicated that the amount of O vacancies was reduced at the irradiated region by annealing. The experimental results are discussed based on electronic properties of CeO2, annihilation of oxygen vacancies, and evolution of irradiation damage.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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Footnotes

Contributing Editor: Khalid Hattar

References

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