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Analysis and modeling of residual stress in diamond thin film deposited by the hot-filament chemical vapor deposition process

Published online by Cambridge University Press:  31 January 2011

Seung I. Cha  and
Soon H. Hong
Soon H. Hong
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-dong, Yusung-gu, Taejon, 305-701, Korea
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Abstract

The effect of microstructure on residual stress in diamond thin film was investigated. The diamond thin film was deposited by the hot filament chemical vapor deposition process with hydrogen/methane precursor gas and followed by annealing at 1150 °C for 1–30 min. The residual stresses of the diamond thin film were measured by Raman spectroscopy. A model to estimate the residual stress was proposed on the basis of grain boundary relaxation mechanism and microstructural analysis of diamond thin film. It is confirmed that the residual stress in diamond thin film is proportional to a microstructural factor, 1/ [D( f + 1)]1/2, where D is the grain size of diamond and f is the volume ratio of nondiamond carbon/diamond.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 7 , July 2001 , pp. 1953 - 1959
Copyright
Copyright © Materials Research Society 2001

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