The silicon vertical MOSFET RF power amplifier described in this paper is the industry’s first to utilize high-voltage vertical technology. Operating under pulse conditions of 200 µs pulse width and 10% duty cycle, it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P1dB compression across 200 MHz of bandwidth at L-band from 1.2 to 1.4 GHz. The DC characteristics include a BVdss of 95 V enabling high-voltage operation with a 48 V power supply. The device is inherently rugged and withstands mismatch tolerances of 20:1 voltage standing wave ratio over all phase angles at full rated power and with 3 dB of input power over-drive and 10% greater than nominal voltage.

Passive location techniques have always been considered an important topic and recently, thanks to digital signal processing (DSP) advances, new methods are being studied and experimented with. The possibility to passively locate radar emitters avoiding transmission is crucial in a variety of military applications, in particular when a flying platform (aircraft or helicopter) is entering an unknown and potentially hostile area. Elettronica SpA (ELT) gave start in 2004 to an experimental campaign in this field with the support and collaboration of the Italian Ministry of Defence (MoD). In this context the following activities were carried out:

• – theoretical study (with analytically derived and simulated results) of a passive location algorithm,

• – design and development of a passive location demonstrator (PLD) qualified for flight,

• – field tests (July 2006) performed in Sardegna (Salto di Quirra).

This paper investigates the effect of spontaneous polarization of magnetron-sputtered aluminum nitride on the electrical properties and reliability of Radio Frequency – Micro-Electro-Mechanical Systems capacitive switches. The assessment is performed with the aid of application of thermally stimulated polarization currents in metal-insulator-metal capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than that expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.

A recently proposed technique for the distributed modeling of extrinsic parasitic effects in electron devices is used for the very first time in conjunction with a lumped equivalent circuit model for the intrinsic device.

Nonlinear modeling of 0.1 μm InP HEMTs for W-band applications is considered here, leading to extremely accurate predictions of harmonic distortion and power added efficiency at the fundamental frequencies of 27 and 94 GHz.

The distributed parasitic network is identified through accurate electromagnetic simulations up to the upper frequency limit of the millimeter-wave band (300 GHz), while standard pulsed I/V and S-parameter measurements up to 67 GHz are used for the identification of the intrinsic device model.

An L-band frequency and rejection-level tunable SiGe HBT differential amplifier with dual stopband is presented. To achieve frequency and rejection-level tunable performance, dual LCR-tank circuit with an active load is incorporated into the design of the series feedback loops of the differential amplifier. The active load consists of a varactor diode represented as a variable C and a common-emitter transistor represented as a variable R. The frequency and rejection level can be tuned independently by controlling a cathode bias voltage of the varactor diode or a base bias voltage of the transistor. The implemented 0.35 μm SiGe HBT amplifier with dual stopband demonstrates a frequency tuning of 0.53–1.16 GHz and a rejection-level variation up to 9.5 dB. The input and output return losses are better than 17.5 and 11 dB over 0.2–1.5 GHz, respectively. The measured P1dB is+3 dBm and IIP3 is 0 dBm with Vcc = 6 V and Ic = 8 mA.

This paper presents an original biosensor chip allowing determination of intrinsic relative permittivity of biological cells at microwave frequencies. This sensor permits non-invasive cell identification and discrimination using an RF signal to probe intracellular medium of biological samples. Indeed, these sensors use an RF planar resonator that allows detection capabilities on less than 10 cells, thanks to the microscopic size of its sensitive area. Especially, measurements between 15 and 35 GHz show the ability label-free biosensors to differentiate two human cell types using their own electromagnetic characteristics. The real part of permittivity of cells changes from 20 to 48 for the nervous system cell types studied. The proposed biodetection method is detailed and we show how the accuracy and the repeatability of measurements have been improved to reach reproducible measurements.

The subspace-based technique is used for the estimation of the time of arrival and Doppler shift of a signal of known waveform. The tool to find required subspaces is a special orthogonal decomposition of received data. It allows one to concentrate Fisher information on the desired parameter in just a few of the first terms of the decomposition. This approach offers a low-dimensional vector of sufficient statistics. It leads to computationally efficient Bayesian estimation. Besides, it results in expansion of the signal-to-noise ratio (SNR) range for effective maximum likelihood (ML) estimation. Finally, we can obtain independent time arrival and Doppler shift estimations based on generalized eigenvectors.

About 25 years have elapsed since the first measurement by a FW-CW (called fast sweeping) reflectometer of the electronic density in magnetized fusion plasma. Substituting tube sources with solid-state components has resulted in a decrease of the sweeping time from the millisecond to the microsecond range. Based on voltage control oscillators and on active frequency multipliers, four profile reflectometers covering the range 33–155 GHz are in operation on Tore-Supra tokamak. Their originality is the use of one source for the launched and reference signal, although the detection is heterodyne. Indeed, a single side band modulator shifts the launched frequency ahead of frequency multipliers. With a sweeping time comparable to the plasma turbulence characteristic time the density profile is frozen. The density profile is then reliably measured with high radial and temporal resolution.

Multilateration (MLAT) systems and wide area MLAT (WAM) systems are particular cases of multisite (multistatic) radar systems (MSRSs): passive MSRSs (PMSRSs) with known expected signal waveforms. One of the most stringent requirements on an MLAT system is a very high accuracy of target (emitter) localization. In view of this, the potential accuracy of emitter localization (PAEL) based on Cramer–Rao inequality is important. Its dependence on system geometry and time of arrival (TOA) measurement accuracy allows choosing reasonable system geometry and requirements on TOA measurements. PAEL for MLAT and WAM systems with different geometry is considered, including systems proposed for the Marco Polo airport in Venice, Italy. The possibility of velocity determination using PAEL for landing and taking off aircrafts is also discussed. The concept of PAEL permits one to analyze joint measurements of different signal parameters and target coordinates. The effect of additional elevation angle measurements on PAEL in the WAM system for the Marco Polo airport is shown.

At present, millimeter wave fast tunable components are required for telecommunication systems, car collision prevention radar, etc. The only mechanical way of control inserts practically no loss in the frequency agile system. That is why micro-electromechanical systems devices are being studied intensively. In an overview, an alternative way – piezo-electromechanical tuning of microwave components – is reported.

This paper reports an investigation and a proposed solution to design Class E power amplifiers above the theoretical maximum frequency allowed by the adopted active device. Starting from the traditional time domain analysis, a numerical algorithm has been developed and presented in order to extend Class E feasibility through the optimization of the output voltage waveform. A hybrid Class E amplifier in laterally diffused metal oxide semiconductor (LDMOS) technology has been designed and measured. The final amplifier shows an output power of more than 10 W with an associated efficiency of 49% (power added efficiency (PAE) = 45%) over a 100-MHz bandwidth around 2.14 GHz.

In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we developed a new electrical method for the temperature measurement of HEMTs and performed several unique studies on the self-heating effects in AlGaN/GaN HEMTs. This method, in combination with transient interferometric mapping (TIM), provides a fundamental understanding of the heat propagation in a transient state of HEMTs. The AlGaN/GaN/Si HEMT thermal resistance was determined to be ~70 K/W after 400 ns from the start of a pulse, and the heating time constant was ~200 ns. Our experimental methods were further applied on multifinger high-power AlGaN/GaN/sapphire HEMTs. The TIM method indicates that the airbridge structure serves as a cooler, removing approximately 10% of the heat energy. In the next study we used TIM and the micro-Raman technique to quantify thermal boundary resistance (TBR) between different wafer materials and GaN epi-structure. We found TBR to be ~7 × 10−8 m2K/W for GaN/Si and ~1.2 × 10−7 m2K/W for GaN/SiC interfaces. The role of TBR at the GaN/sapphire interface was found to be less important.

In this paper, a miniaturized bandpass filter for ultra-wide-band applications is proposed. It is based on the embedding of high-pass structures in a low-pass filter. A semi-lumped technology combining surface-mounted capacitors and transmission lines has been used. The filter design rules have been carried out. Furthermore, two filters having a 3-dB fractional bandwidth of 142 and 150%, centered at 0.77 and 1 GHz, respectively, have been realized for a proof of concept. Measured characteristics, in good agreement with simulations, show attractive properties of return loss (|S11| <−18 dB), insertion loss (<0.3 dB), and a maximum group delay and group delay variation of 2 and 1.3 ns, respectively. A distributed filter based on the same low-pass/high-pass approach has been also realized and measured for comparison. The size reduction reaches 85% for the semi-lumped filter, and its selectivity is improved with a shape factor of 1.3:1 instead of 1.5:1. The semi-lumped filter's drawback is related to a smaller rejection bandwidth compared to the distributed one. To improve the high-frequency stopband, an original technique for spurious responses suppression based on capacitively loaded stubs has been proposed. Even if the performances do not reach that obtained for the distributed approach, with this technique spurious responses are pushed until eight times the center frequency. A sensitivity study vs. critical parameters has also been carried out, showing the robustness of the design.

The use of 130-nm CMOS for power amplifiers at 20 GHz is explored through a set of power amplifiers as well as transistor level measurements. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, and the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor-level characterization using load pull measurements on 1-mm gate width transistors yielded 148-mW/mm output power. Transistor modeling and layout for power amplifiers are also discussed. An estimate on the maximum achievable output at 20 GHz from 130-nm CMOS power amplifiers, based on findings in this paper and the literature, is finally presented.

The great interest of optical fiber links in communicating systems especially in ultra-wide band (UWB) communications has grown up in the last decade and requires co-simulation for mixed circuits design exploiting both optical and microwave domains. In this paper, we report an original modeling method of an electro-absorption modulator associated with a distributed-feedback laser to simulate an optical transmitter of an UWB over fiber system. Large signal optoelectronic device models can be developed and implemented in a high-frequency simulator, such as advanced design system-Ptolemy to analyze the performances of fiber radio links and study the impact of the transmitter characteristics. This specific simulation way, taking into account precisely electrical characteristics of both electrical and optical circuits, links two different frequency domains by coupling electrical and optical modules in the same system simulator. Therefore, a complete simulation of an UWB multi-band orthogonal frequency division multiplexing signal transmission over fiber with an external modulator is investigated.

Two localization algorithms for multilateration systems are derived and analyzed. Instead of the classical time difference of arrival (TDOA), a direct use of the time of arrival (TOA) is made. The algorithms work for arbitrary spatial dimensions and overdetermined systems. These derivations are tested in a real-case implementation with simulated data (in particular, the multilateration (MLAT) system installed on the Malpensa Airport in Milan was considered for the MLAT simulation and its possible extension to wide area multilateration (WAM) system was considered for WAM trials). The results are also compared with the present-day algorithms performance, mostly based on TDOA.