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Nonlinear modeling of InP devices for W-band applications

Published online by Cambridge University Press:  19 March 2009

Davide Resca ,
Valeria Di Giacomo ,
Antonio Raffo ,
Rafael Cignani ,
Alberto Santarelli ,
Giorgio Vannini ,
Fabio Filicori ,
Dominique Schreurs ,
Farid Medjdoub  and
Nicolas Thouvenin
...Show all authors
Davide Resca*
Affiliation:
Department of Electronics Information and Systems, The University of Bologna, Viale C. Pepoli 3/2, 40123 Bologna, Italy, Emails: [email protected], [email protected], [email protected], [email protected]
Valeria Di Giacomo
Affiliation:
Department of Electronics, The University of Ferrara, Via Saragat 1, 44100 Ferrara, Italy, Emails: [email protected], [email protected], [email protected]
Antonio Raffo
Affiliation:
Department of Electronics, The University of Ferrara, Via Saragat 1, 44100 Ferrara, Italy, Emails: [email protected], [email protected], [email protected]
Rafael Cignani
Affiliation:
Department of Electronics Information and Systems, The University of Bologna, Viale C. Pepoli 3/2, 40123 Bologna, Italy, Emails: [email protected], [email protected], [email protected], [email protected]
Alberto Santarelli
Affiliation:
Department of Electronics Information and Systems, The University of Bologna, Viale C. Pepoli 3/2, 40123 Bologna, Italy, Emails: [email protected], [email protected], [email protected], [email protected]
Giorgio Vannini
Affiliation:
Department of Electronics, The University of Ferrara, Via Saragat 1, 44100 Ferrara, Italy, Emails: [email protected], [email protected], [email protected]
Fabio Filicori
Affiliation:
Department of Electronics Information and Systems, The University of Bologna, Viale C. Pepoli 3/2, 40123 Bologna, Italy, Emails: [email protected], [email protected], [email protected], [email protected]
Dominique Schreurs
Affiliation:
Katholieke Universiteit Leuven, The Electronic Engineering Department, B-3001 Leuven, Belgium, Email: [email protected]
Farid Medjdoub
Affiliation:
Department of Electron Devices and Circuits, The University of Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany, Email: [email protected]
Nicolas Thouvenin
Affiliation:
The I.E.M.N/III V lab/TIGER, U.M.R.-C.N.R.S. 8520, U.S.T.L., Avenue Poincaré, B.P. 69, 59652 Villeneuve D'Ascq Cedex, France, Emails: [email protected], [email protected]
Christophe Gaquière
Affiliation:
The I.E.M.N/III V lab/TIGER, U.M.R.-C.N.R.S. 8520, U.S.T.L., Avenue Poincaré, B.P. 69, 59652 Villeneuve D'Ascq Cedex, France, Emails: [email protected], [email protected]
*
Corresponding author: D. Resca Email: [email protected]
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Abstract

A recently proposed technique for the distributed modeling of extrinsic parasitic effects in electron devices is used for the very first time in conjunction with a lumped equivalent circuit model for the intrinsic device.

Nonlinear modeling of 0.1 μm InP HEMTs for W-band applications is considered here, leading to extremely accurate predictions of harmonic distortion and power added efficiency at the fundamental frequencies of 27 and 94 GHz.

The distributed parasitic network is identified through accurate electromagnetic simulations up to the upper frequency limit of the millimeter-wave band (300 GHz), while standard pulsed I/V and S-parameter measurements up to 67 GHz are used for the identification of the intrinsic device model.

Keywords

Semiconductor device modelingField-effect transistors (FETs)Electromagnetic analysisSemiconductor device measurements
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 2: TARGET , April 2009 , pp. 145 - 151
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

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