Bessel, Bessel-Gauss, and Gaussian beams have widely been investigated in optics in the paraxial approximation, under the frame of a scalar wave theory. Such approximations can hardly be applied in the microwave/millimeter-wave range, where the vectorial nature of the electromagnetic fields cannot be neglected, and experimental realizations for some of these beams appeared only recently. In this work, we discuss the generation of Bessel, Bessel-Gauss, and Gaussian beams through a fully vectorial electromagnetic approach. The field derivation of all these beams is first illustrated and numerical evaluations are then reported to compare their different propagation and diffractive behaviors. Finally, an innovative approach for realizing such solutions with planar microwave devices exploiting leaky waves is demonstrated through accurate numerical simulations.

This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

Next-generation automotive radar sensors are increasingly becoming sensitive to cost and size, which will leverage monolithically integrated radar system-on-Chips (SoC). This article discusses the challenges and the opportunities of the integration of the millimeter-wave frontend along with the digital backend. A 76–81 GHz radar SoC is presented as an evaluation vehicle for an automotive, fully depleted silicon-over-insulator 22 nm CMOS technology. It features a digitally controlled oscillator, 2-millimeter-wave transmit channels and receive channels, an analog base-band with analog-to-digital conversion as well as a digital signal processing unit with on-chip memory. The radar SoC evaluation chip is packaged and flip-chip mounted to a high frequency printed circuit board for functional demonstration and performance evaluation.

This study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$.

This paper presents a fully integrated three-way Doherty architecture to address the challenges of 5G applications using laterally-diffused metal-oxide semiconductor (LDMOS) technology. By using the so-called CDS cancelation method for the Doherty combiner design, a wideband impedance transformation is achieved, that combined with the three-way Doherty power amplifier (DPA) architecture allows for high efficiency in deep back-off, with a reduced load modulation for high bandwidth. Throughout this paper, the design approach and realization are described, while multiple critical design challenges will be addressed such as low frequency drain resonance optimization, impact of in-package coupling effects, and linearity versus efficiency tradeoff. Two state-of-the-art three-way fully integrated LDMOS DPA monolithic microwave integrated circuit (MMICs) are presented to demonstrate how these measures have been successfully applied to different power amplifier (PA) line-up components for 5G base station systems. First, a 60 W 1.8–2.2 GHz multi-stage device for driver application in true dual-band operation is presented. The circuit design pays special attention to extended PA video bandwidth thanks to integrated passive device. After digital pre-distortion (DPD) in dual-band operation, this highly linear device achieves an outstanding adjacent channel leakage ratio (ACLR) of −56 dBc for a 2cLTE 20 MHz 8 dB peak-to-average ratio signal spaced by 345 MHz, thus 385 MHz instantaneous bandwidth (IBW), with 29% efficiency at 35 dBm, 12 dB output back-off (OBO). Second, the simulation and measurement results of a 55 W 2.6 GHz multi-stage DPA for massive-MIMO final stage application are presented, which yields an excellent linearized efficiency of 49% using a 200 MHz 10cLTE signal with an ACLR lower than −47.5 dBc. For 8cLTE 20 MHz (160 MHz IBW), the device yields 50% efficiency with −50.7 dBc ACLR linearized after DPD. The achieved efficiency is well comparable to published GaN DPAs. These results were achieved by improved simulation techniques to minimize frequency dispersion and thus allow high efficiency operation over wide bandwidth. Both devices show that LDMOS is not only a mature technology which allows those PAs to be reliable and low-cost for mass production in very compact packages, but also provide best-in-class RF performance according to the needs of 5G base station systems.

New protocols related to Internet-of-things applications may introduce previously unnoticed measurement effects in reverberation chambers (RCs) due to the narrowband nature of these protocols. Such technologies also require less loading to meet the coherence-bandwidth conditions, which may lead to higher variations, hence uncertainties, across the channel. In this work, we extend a previous study of uncertainty in NB-IoT and CAT-M1 device measurements in RCs by providing, for the first time, a comprehensive uncertainty analysis of the components related to the reference and DUT measurements. By use of a significance test, we show that certain components of uncertainty become more dominant for such narrowband protocols, and cannot be considered as negligible, as in current standardized test methods. We show that the uncertainty, if not accounted for by using the extended formulation, will be greatly overestimated and could lead to non-compliance to standards.

The generation and transmission of millimeter-wave signals for 5G applications require the use of broadband and high output power photodetectors to bridge from the optical and electronic domains. Therefore, the deep knowledge on the equivalent circuit characteristics of these devices is vital. This study reviews and analyzes de-embedding techniques contributing to the characterization of the physical aspects within the active region of uni-traveling carrier photodiodes. De-embedding methods analytically remove the parasitic effects of the electrical transmission lines connected to their active area allowing the extraction of their series resistance and junction capacitance toward the synthesis of an equivalent circuit with lumped elements. The open-short technique is examined and a systematic error introduced by this process underlines the vulnerability of the method on removing parasitics with higher complexity. This error is quantified leading to the implementation of a corrected equation converging with the characteristic features of an $S$-parameter-based de-embedding. These characteristics are also analyzed through simulation approaches showing minimal equivalent inaccuracies on eliminating more complex symmetrical parasitics. A thorough comparison between these three methods is conducted through the calculation of lumped components corresponding to the active region of diodes with different sizes.

This paper discusses the design steps and experimental characterization of a monolithic microwave integrated circuit (MMIC) power amplifier developed for the next generation of K-band 17.3–20.2 GHz very high throughput satellites. The technology used is a commercially available 100-nm gate length gallium nitride on silicon process. The chip was developed taking into account the demanding constraints of the spacecraft and, in particular, carefully considering the thermal constraints of such technology, in order to keep the junction temperature in all devices below 160°C in the worst-case condition (i.e., maximum environmental temperature of 85°C). The realized MMIC, based on a three-stage architecture, was first characterized on-wafer in pulsed regime and, subsequently, mounted in a test-jig and characterized under continuous wave operating conditions. In 17.3–20.2 GHz operating bandwidth, the built amplifier provides an output power >40 dBm with a power added efficiency close to 30% (peak >40%) and 22 dB of power gain.

This contribution deals with a frontend for interleaved receive (Rx)-/transmit (Tx)-integrated phased arrays at K-/Ka-band. The circuit is realized in printed circuit board technology and feeds dual-band Rx/Tx- and single-band Tx-antenna elements. The dual-band element feed is composed of a substrate-integrated waveguide (SIW) diplexer with low insertion loss, a low-noise amplifier (LNA), a bandpass filter, and several passive transitions. The compression properties of the LNA are identified through two-tone measurements. The results dictate the maximum allowable output power of the power amplifier. The single band feed consists of a SIW with several transitions. Simulation and measurement results of the individual components are presented. The frontend is assembled and measured. It exhibits an Rx noise figure of 2 dB, a Tx insertion loss of ~ 2.9 dB, and an Rx/Tx-isolation of 70 dB. The setup represents the unit cell of a full array and thus complies with the required half-wave spacing at both Rx and Tx.

This paper describes a small unmanned aerial vehicle (UAV)-based synthetic aperture radar (SAR) system using low-cost radar (5–6 GHz), position (GNSS/RTK) and attitude (IMU) sensors for the generation of high-resolution images. Measurements using straight as well as highly curved flight trajectories and varying flight speeds are presented, showing range and cross-range lobe-widths close to the theoretical limits. An analysis of the improvements obtained by the use of attitude angles (roll, pitch, and yaw), to correct for the relative offsets in antenna positions as the UAV moves, is included. A capability to generate SAR images onboard with the back-projection algorithm has been implemented using a GPU accelerated single-board computer. Generated images are transmitted to ground using a Wi-Fi data link.

This communication reports significant isolation improvement utilizing planar suspended line (PSL) technique in ultra wideband (UWB) antenna for Multiple Input Multiple Output (MIMO) application. The antenna exhibits dual-band notched characteristic in Wireless Local Area Network (WLAN) band covering 5.45–5.85 GHz range; and in 7.15–7.95 GHz range for X-band downlink operations in satellite communication. Band-notching characteristics have been obtained by employing a single Elliptical Split Ring Resonator (ESSR) placed adjacent to each microstrip feed line of the radiating element and duo of “Y”-shaped strips employed within the circular ring of individual radiating elements. Two elements antenna occupy a compact space of 20 × 36 × 1.6 mm3 exhibiting huge measured impedance bandwidth (S11/S22 < −10 dB) covering 3.1–11.5 GHz and significant isolation of >21 dB in the almost entire band of operation. The electrical performance of antennas has been analyzed in terms of various MIMO parameters. Measured results demonstrate good accord with simulated results proving the competency of proposed antenna in high-density package systems and massive MIMO applications.

Proposed is a wideband, low profile, fully flexible, and all-textile-based slotted triangular antenna loaded with a 2 × 2 textile-inspired artificial magnetic conductor to be worn on the wrist. The integrated antenna design is designed to cover the frequency band from 3.1 to 6.5 GHz. The integrated design has two main resonances, where the first one is at 3.5 GHz, which can serve the WiMAX communication standard, while the second is at 5.8 GHz, which can serve the Industrial, Scientific and Medical (ISM)-band. The incorporated textile materials are composed of the conductive and dielectric fabrics that are realized by ShieldIt and Felt, respectively. When simulated against the human model wrist, the integrated antenna design displayed a realized gain of 6.71 dBi and radiation efficiency of 79.1%, at 3.5 GHz. Furthermore, at 5.8 GHz, it displayed a realized gain of 7.82 dBi and total efficiency performances of 66.1%. Moreover, it accomplished very low SAR levels within the antenna frequency band. Averaged over 1 g of tissue, it exhibited maximum SAR levels of 3.28 × 10−6 and 9.37 × 10−7 W/kg at 3.5 and 5.8 GHz, respectively. For the bent scenarios, the integrated antenna design displayed robustness when bent at an angle of 20 and 40°. Finally, measurement results are illustrated and analyzed. Based on the presented results, the suggested all-textile integrated antenna design might be designated for integration with the wristband to monitor the user health conditions through many possible frequency channels.

A compact antenna module with a single band notch at wireless local area network (WLAN) (5.725–5.825 GHz) for ultra-wideband (UWB) multiple input multiple output (MIMO) applications is proposed. Proposed antenna which acquires size of 0.299 λ × 0.413 λ × 0.005 λ mm3 at 3.1 GHz consists of two symmetrical radiators placed side by side on global merchandise link (GML) 1000 substrate (εr = 3.2, tan δ = 0.004). Isolation between the antenna elements is >18 dB in the whole UWB band, which is achieved by introducing the vertical stub and H-slot between the monopole radiators in the ground plane. The simulated and measured results of the antenna system are in good agreement. The proposed antenna covers entire UWB with impedance bandwidth (|S11| < −15 dB) from 3.1 to 11 GHz except at WLAN notched band. The designed antenna module bears low envelope correlation coefficient and minimal multiplexing efficiency hence fulfilling criteria suitable for various wireless MIMO applications.