Tunable microwave devices will play an important role in future wireless systems, in which high-frequency bands, e.g. millimeter waves, will become promising, due to its huge spectrum availability. At such frequency bands, liquid crystals (LCs) exhibit low microwave loss, which is excellent compared with the other tuning elements. In this paper, LC-based microwave components are fabricated by using low temperature co-fired ceramic technology, allowing the integration of the LC into microwave structures. The first component, the amplitude tuner, controls the signal's amplitude by using the interference concept, which exhibits a tunable attenuation range from 11 dB to 30 dB at 30 GHz. The second component is a 3-pole tunable bandpass filter, which is realized by using a substrate integrated waveguide topology, enabling a device with comparatively high-quality factors (Q-factors). The measurement results show Q-factors in the range of 68 to 100 for a frequency tuning of 29.4–30.1 GHz, i.e. a tuning range of 700 MHz, accompanied by an insertion loss 2 dB to 4 dB.

In this work, we propose an azimuthally-invariant periodic leaky-wave (LW) radiator for the generation of Bessel beams and X-waves by means of backward cylindrical LWs at millimeter wavelengths. A rigorous framework is first outlined to understand the theoretical constraints of such a novel design. A specific attention is devoted to the impact of the attenuation constant on the focusing properties of the generated Bessel beams. On this basis, a practical design is then proposed to meet the previous requirements. Numerical results for different frequency spectra confirm the interesting capabilities of the considered structure, paving the way for the first generation of nondiffracting pulses produced by focusing LWs.

In this contribution, the impact of extreme environmental conditions in terms of energy-level radiation of protons on silicon–germanium (SiGe)-integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (low-noise amplifiers) are used as carriers for assessing the impact of aggressive stress conditions on their performances. Perspectives for holistic modeling and characterization approaches accounting for various interaction mechanisms (substrate resistivity variations, couplings/interferences, drift in DC and radio frequency (RF) characteristics) for active samples are down to allow for optimal solutions in pushing SiGe technologies toward applications with harsh and radiation-intense environments (e.g. space, nuclear, military). Specific design prototypes are built for assessing mission-critical profiles for emerging RF and mm-wave applications.

In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.

A microwave design for an industrial scale applicator of a continuous microwave assisted depolymerization of polyethylene terephthalate (PET) has been developed. The cavity is designed for use in combination with an Archimedean screw pump to transport the reaction material, surrounded by a cylindrical pipe with a diameter of 250 mm and a length of 250 mm at the 2.45 GHz ISM band. The proposed design is modular and can be easily expanded for the heating of longer reactor tubes. Simulation results show that a homogeneous heating of the process material along the screw axis can be achieved by using a novel cavity design which is based on the TE1,0,x– rectangular waveguide cavity mode. The achieved design provides high energy efficiency with a reflected power of less than 10%. It is robust against changes in the permittivity of the reactants. The electromagnetic design is based on the dielectric properties of the solvolytic reaction mixture measured in the relevant temperature range. It is verified over the full range of the expected permittivities.

A multi-octave receiver chain is presented for the use in a monolithic integrated vector network analyzer. The receiver exhibits a very wide frequency range of 1–32 GHz, where the gain meets the 3 dB-criterion. The differential receiver consists of an ultra-wideband low noise amplifier, an active mixer and an output buffer and exhibits a maximum conversion gain (CG) of 16.6 dB. The main design goal is a very flat CG over five octaves, which eases calibration of the monolithic integrated vector network analyzer. To realize variable gain functionality, without losing much input matching, an extended gain control circuit with additional feedback branch is shown. For the maximum gain level, a matching better than −10 dB is achieved between 1–28 GHz, and up to 30.5 GHz the matching is better than −8.4 dB. For both, the input matching and the gain of the LNA, the influence of the fabrication tolerances are investigated. A second gain control is implemented to improve isolation. The measured isolations between RF-to-LO and LO-to-RF are better than 30 dB and 60 dB, respectively. The LO-to-IF isolation is better than 35 dB. The noise figure of the broadband receiver is between 4.6 and 5.8 dB for 4–32 GHz and the output referred 1-dB-compression-point varies from 0.1 to 4.3 dBm from 2–32 GHz. The receiver draws a current of max. 66 mA at 3.3 V.

For a fully 360° detection around a vehicle, novel automotive radar system concepts consist of up to eight radar sensors. The existing sensor-mounting areas, such as front grill or bumper corners would no longer be sufficient. Therefore, additional mounting positions such as B-pillars and side skirts have to be considered, where the radar can observe the side area of the vehicle. However, these new mounting positions usually offer significantly less space, than the established mounting areas. The solution is, to build separate miniature radar frontends that can be placed all over the vehicle and are connected to one central signal processing and power supply unit. Investigations for a miniature radar frontend have been done, based on RF360 low loss non-shrinkage low-temperature cofired ceramic (LTCC) substrate. For the automotive radar band (76–81 GHz), an array antenna has been simulated, manufactured, and the radiation pattern has been measured. A first sensor with a miniature radar frontend based on an LTCC multilayer has been designed and manufactured.

In this contribution, a design methodology for octave-bandwidth power amplifiers (PA) for 5G communication systems using surface mount dual-flat-no-lead packaged gallium-nitride high-electron-mobility transistor devices is presented. Systematic source- and load-pull simulations have been used to find the optimum impedances across 75% fractional bandwidth for S- (1.9–4.2 GHz) and C-band (3.8–8.4 GHz) PAs. The harmonic impact is considered to improve the output power and efficiency of the PAs. Utilizing the characteristic behavior of the transistors leads to modified optimum fundamental load impedances for the low-frequency range, which have higher gain compared with high-frequency range, and minimize the influence of the higher harmonics. Continuous wave large-signal measurements of the realized S-Band PA show a power added efficiency (PAE) of more than 40% from 1.9–4.2 GHz and a flat power gain of 11 dB while achieving a saturated output power of 10 W. The measured performance of the C-Band PA demonstrates a delivered power between 3.5 and 5 W across the frequency range of 3.8–8.4 GHz. A flat power gain of around 9 ± 0.5 dB with 26–40% PAE is achieved.